MOS FET. FK8V03060L Datasheet

FK8V03060L FET. Datasheet pdf. Equivalent


Part FK8V03060L
Description Silicon N-channel MOS FET
Feature DReovcisNioon. . T2 T4-EA-13170 FK8V03060L Silicon N-channel MOS FET For lithium-ion secondary batt.
Manufacture Panasonic
Datasheet
Download FK8V03060L Datasheet


DReovcisNioon. . T2 T4-EA-13170 FK8V03060L Silicon N-channe FK8V03060L Datasheet
Recommendation Recommendation Datasheet FK8V03060L Datasheet




FK8V03060L
DReovcisNioon. . T2 T4-EA-13170
FK8V03060L
Silicon N-channel MOS FET
For lithium-ion secondary battery protection circuit
For DC-DC Converter
Features
Low drain-source On-state Resistance
RDS(on) typ. = 22 m(VGS = 4.5 V)
High-speed switching : Qg = 3.8 nC
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: 3F
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Unit
Drain-source Voltage
VDS
33
V
Gate-source Voltage
Drain Current (Steady State) *1
Drain Current (t = 10 s) *1
Drain Current (Pulsed) *1,*2
Source Current (Pulsed)
(Body Diode) *1,*2
Total Power Dissipation (Steady State) *1
Total Power Dissipation (t = 10 s) *1
VGS
ID
IDp
ISp
(BD)
PD
20
6.5
8
26
6.5
1
1.5
V
A
W
Channel Temperature
Tch 150
C
Operating Ambient Temperature
Topr -40 to + 85
C
Storage Temperature Range
Tstg -55 to +150 C
Note) *1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150C
Product Standards
MOS FET
FK8V03060L
2.9
0.3
8765
Unit: mm
0.16
1 2 3 4 (0.81)
0.65
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Panasonic
JEITA
Code
WMini8-F1
SC-115
Internal Connection
(D) (D) (D) (D)
8765
1234
(S) (S) (S) (G)
Pin Name
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Established : 2011-06-06
Revised : 2013-06-24
Figure1 FR4 Glass-Epoxy Board
25.4 mm × 25.4 mm × 0.8 mm
Page 1 of 6



FK8V03060L
DReovcisNoni. . oT2 T -E4 -A1 3 1 7 0
Product Standards
MOS FET
FK8V03060L
Electrical Characteristics Ta = 25C 3C
Static Characteristics
Parameter
Symbol
Conditions
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS VDS = 33 V, VGS = 0 V
Gate-source Leakage Current
IGSS VGS = 16 V, VDS = 0 V
Gate-source Threshold Voltage
Vth ID = 0.48 mA, VDS = 10 V
Drain-source On-state Resistance *1
RDS(on)1 ID = 3.3 A, VGS = 10 V
RDS(on)2 ID = 3.3 A, VGS = 4.5 V
Min Typ Max
33
10
10
1 2.5
15 20
22 35
Unit
V
A
A
V
m
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time *2
Rise Time *2
Turn-off Delay Time *2
Fall Time *2
Total Gate Charge
Gate-source Charge
Gate-drain Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 10 V, VGS = 0 V
f = 1 MHz
VDD = 15 V, VGS = 0 to 10 V
ID = 3.3 A
VDD = 15 V, VGS = 10 to 0 V
ID = 3.3 A
VDD = 15 V, VGS = 0 to 4.5 V,
ID = 6.5 A
360
70 pF
50
8
3
24
ns
9
3.8
1.4 nC
1.6
Body Diode Characteristic
Diode Forward Voltage *1
VSD IS = 3.3 A, VGS = 0 V
0.8 1.2
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test: Ensure that the channel temperature does not exceed 150C
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Establ shied : 2 0 -01 -061 6
Revised : 2 0 -01 -263 4
Page 2 of 6







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)