MOS FET. SK840303 Datasheet

SK840303 FET. Datasheet pdf. Equivalent


Part SK840303
Description Silicon N-channel MOS FET
Feature This product complies with the RoHS Directive (EU 2002/95/EC). SK840303 Silicon N-channel MOS FET .
Manufacture Panasonic
Datasheet
Download SK840303 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC SK840303 Datasheet
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SK840303
This product complies with the RoHS Directive (EU 2002/95/EC).
SK840303
Silicon N-channel MOS FET
For DC-DC converter circuits
Overview
SK840303 is the N-channel MOS FET that is highly suitable for DC-DC
converter and other switching circuits. 
Features
Low drain-source ON resistance:RDS(on) typ. = 6 mW (VGS = 4.5 V)
Small package with back side heat sink for improved heat dissipation.
Eco-friendly Halogen-free package
Packaging
SK8403030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
VDSS
33
V
Gate-source surrender voltage
VGSS
±20
V
Drain current
Peak drain current *1, 2
ID 22
IDP 66
A
A
Power dissipation
TC = 25°C
t = 10 s *1, 2
PD
28
2
W
Repetitive peak avalanche current *3
Avalanche energy capability *4
IAR
EAS
22
50
A
mJ
Channel temperature
Tch 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *1: Mounted on a glass epoxy PC board: 25.4 mm × 25.4 mm × 0.8 mm
*2: Pulse measurement: Channel temperature not to exceed 150°C
*3: VDD = 24 V, VGS = 10 V 0 V, L = 0.1 mH, Tch = 25°C (initial)
*4: VDD = 24 V, VGS = 10 V 0 V, L = 0.1 mH, IAR =15 A, Tch = 25°C (initial)
Package
Code
HSSO8-F1-B
Package dimension clicks here.
Pin Name
1: Source
2: Source
3: Source
4: Gate
5: Drain
6: Drain
7: Drain
8: Drain
Marking Symbol: 03
Internal Connection
(D) (D) (D) (D)
8765
1234
(S) (S) (S) (G)
Publication date: May 2012
Ver. AED
1



SK840303
SK840303
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Static Characteristics
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate-source threshold voltage
Drain-source ON resistance
Dynamic Characteristics
VDSS
IDSS
IGSS
VGS(th)
RDS(on)
Yfs
ID = 1 mA, VGS = 0 V
VDS = 33 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
ID = 2.3 mA, VDS = 10 V
ID = 11 A, VGS = 10 V
ID = 11 A, VGS = 4.5 V
ID = 11 A, VGS = 10 V
33
10
±10
1 2.5
46
69
90
Short-circuit input capacitance (Common source) Ciss
850 1450 2050
Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0 V, f = 1 MHz
190 320 450
Reverse transfer capacitance (Common source)
Crss
40 110 180
Signal source resistance
Rg f = 8 MHz
2.8 5
Turn-on delay time *
Rise time *
td(on) VDD = 15 V, VGS = 0 V to 10 V,
tr ID = 11 A
8
7
Turn-off delay time *
Fall time *
td(off)
tf
VDD = 15 V, VGS = 10 V to 0 V,
ID = 11 A
40
6
Gate charge load
Gate-source charge
Gate-drain charge
Qg
Qgs
VDD = 15 V, VGS = 0 V to 4.5 V,
ID = 22 A
Qgd
10
5
3
Body diode characteristics
Drain-source voltage
VSD IS = 11 A, VGS = 0 V
0.8 1.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Measurement circuit
VIN
10 V
0V
PW = 10 µs
Duty Cycle 1%
5
VIN
4.7
G
VDD = 15 V
D VOUT
S
VIN
VOUT
90%
10%
90%
10%
td(on) tr
td(off) tf
Unit
V
mA
mA
V
mW
S
pF
pF
pF
W
ns
ns
ns
ns
nC
nC
nC
V
2 Ver. AED







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