planar type. DB2X415 Datasheet

DB2X415 type. Datasheet pdf. Equivalent


Part DB2X415
Description Silicon epitaxial planar type
Feature This product complies with the RoHS Directive (EU 2002/95/EC). DB2X415 Silicon epitaxial planar typ.
Manufacture Panasonic
Datasheet
Download DB2X415 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC DB2X415 Datasheet
Doc No. TT4-EA-13620 Revision. 3 Product Standards Schottky DB2X41500L Datasheet
Recommendation Recommendation Datasheet DB2X415 Datasheet




DB2X415
This product complies with the RoHS Directive (EU 2002/95/EC).
DB2X415
Silicon epitaxial planar type
For rectication
Features
Low forward voltage VF
High forward current (Average) rating : IF(AV) = 3 A
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Package
Code
Mini2-F4-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: AD
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
Forward current (Average) *1
Non-repetitive peak forward surge current
VR
IF(AV)
IFSM
40
3.0
50 *2
15 *3
V
A
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg –55 to +125 °C
Note) *1: Mounted on an alumina PC board
*2: Rectangle wave 1 cycle (Pulse width = 50 ms, non-repetitive peak current))
*3: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 1.0 A
VF2 IF = 3.0 A
0.35 0.44
0.47 0.55
V
Reverse current
IR VR = 40 V
40 200 µA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
70 pF
Reverse recovery time *
trr
IF = IR = 100 mA, Irr = 10 mA ,
RL = 100
25 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: March 2010
ZKH00316BED
1



DB2X415
DB2X415
This product complies with the RoHS Directive (EU 2002/95/EC).
DB2X415_ IF-VF
IF VF
10
1
101
Ta =125°C
102 100°C
103 75°C
25°C
104
25°C
105
106
0
0.4 0.8 1.2
Forward voltage VF (V)
DB2X415_ IR-VR
IR VR
101
102 Ta = 125°C
100°C
103 75°C
104
25°C
105
106
25°C
107
108
0
10 20 30 40
Reverse voltage VR (V)
50
DB2X415_Ct-VR
Ct VR
300
Ta = 25°C
250
200
150
100
50
0
0 5 10 15 20 25 30 35
Reverse voltage VR (V)
2 ZKH00316BED





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