planar type. DSA5001 Datasheet

DSA5001 type. Datasheet pdf. Equivalent


Part DSA5001
Description Silicon PNP epitaxial planar type
Feature DSA5001 Silicon PNP epitaxial planar type For general amplification Complementary to DSC5001 DSA2001.
Manufacture Panasonic
Datasheet
Download DSA5001 Datasheet


DSA5001 Silicon PNP epitaxial planar type For general ampli DSA5001 Datasheet
Recommendation Recommendation Datasheet DSA5001 Datasheet




DSA5001
DSA5001
Silicon PNP epitaxial planar type
For general amplification
Complementary to DSC5001
DSA2001 in SMini3 type package
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: A1
Packaging
DSA5001×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Topr
Tstg
–60
–50
–7
–100
–200
150
150
–40 to +85
–55 to +150
V
V
V
mA
mA
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
Unit: mm
SMini3-F2-B
SC-85
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *1
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = –10 mA, IE = 0
IC = –2 mA, IB = 0
IE = –10 mA, IC = 0
VCB = –20 V, IE = 0
VCE = –10 V, IB = 0
VCE = –10 V, IC = –2 mA
IC = –100 mA, IB = –10 mA
VCE = –10 V, IC = –2 mA
VCB = –10 V, IE = 0, f = 1 MHz
–60
–50
–7
– 0.1
–100
210 460
– 0.2 – 0.5
150
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Code
RS 0
Rank
R S No-rank
hFE
Marking Symbol
210 to 340
A1R
290 to 460
A1S
210 to 460
A1
Product of no-rank is not classified and have no marking symbol for rank.
Unit
V
V
V
mA
mA
V
MHz
pF
Publication date: March 2014
Ver. DED
1



DSA5001
DSA5001
250
DSA5001_PC-Ta
PC Ta
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
DSA5001_VCEsat-IC
VCE(sat) IC
10
IC / IB = 10
1
0.1 Ta = 85°C
40°C
25°C
0.01
0.1
1
10 −100
Collector current IC (mA)
DSA5001_fT-IC
fT IC
250
VCE = 10 V
Ta = 25°C
200
DSA5001_IC-VCE
IC VCE
120
Ta = 25°C
100
IB = −600 µA
80 500 µA
400 µA
60
300 µA
40 200 µA
20 100 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
DSA5001_IC-VBE
IC VBE
120
VCE = −10 V
100
25°C
Ta = 85°C
80
40°C
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
150
100
50
0
0.1
1
10 100
Collector current IC (mA)
DSA5001_hFE-IC
hFE IC
600
VCE = −10 V
500
400
Ta = 85°C
300
25°C
200
40°C
100
0
0.1
1
10 100
Collector current IC (mA)
DSA5001_Cob-VCB
Cob VCB
IE = 0
4.0 f = 1 MHz
Ta = 25°C
3.0
2.0
1.0
0
1 10 100
Collector-base voltage VCB (V)
Ver. DED
2







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