planar type. DSC5001 Datasheet

DSC5001 type. Datasheet pdf. Equivalent


Part DSC5001
Description Silicon NPN epitaxial planar type
Feature This product complies with the RoHS Directive (EU 2002/95/EC). DSC5001 Silicon NPN epitaxial planar.
Manufacture Panasonic
Datasheet
Download DSC5001 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC DSC5001 Datasheet
Recommendation Recommendation Datasheet DSC5001 Datasheet




DSC5001
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5001
Silicon NPN epitaxial planar type
For general amplication
Complementary to DSA5001
Features
High forward current transfer ratio hFE with excellent linearity
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
60
50
7
100
200
150
150
Storage temperature
Tstg –55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Package
Code
SMini3-F2-B
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: C1
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
60
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCEO
VEBO
IC = 2 mA, IB = 0
IE = 10 mA, IC = 0
50
7
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
ICEO
hFE
VCE(sat)
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
100
210 460
0.13 0.3
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT VCE = 10 V, IC = 2 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
150
1.5
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classication
Code
RS 0
Rank
R S No-rank
hFE
Marking Symbol
210 to 340
C1R
290 to 460
C1S
210 to 460
C1
Product of no-rank is not classied and have no marking symbol for rank.
Unit
V
V
V
mA
mA
V
MHz
pF
Publication date: November 2009
ZJC00440BED
1



DSC5001
DSC5001
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5001_PC-Ta
PC Ta
250
200
150
100
50
DSC5001_IC-VCE
IC VCE
120
Ta = 25°C
100
80 IB = 250 µA
60 200 µA
150 µA
40
100 µA
20 50 µA
DSC5001_hFE-IC
hFE IC
600
VCE = 10 V
500
400 Ta = 85°C
300 25°C
200 30°C
100
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
DSC5001_VCEsat-IC
VCE(sat) IC
10
IC / IB = 10
1
0.1
Ta = 85°C
0.01
0.1
25°C
30°C
1 10
Collector current IC (mA)
100
DSC5001_fT-IC
fT IC
250
VCE = 10 V
Ta = 25°C
200
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
DSC5001_IC-VBE
IC VBE
120
VCE = 10 V
100
25°C
Ta = 85°C
80
30°C
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
0
0.1 1 10 100
Collector current IC (mA)
DSC5001_Cob-VCB
Cob VCB
4.0
3.0
2.0
1.0
0
1 10 100
Collector-base voltage VCB (V)
150
100
50
0
0.1 1 10 100
Collector current IC (mA)
2 ZJC00440BED







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)