planar type. DSC5501 Datasheet

DSC5501 type. Datasheet pdf. Equivalent


Part DSC5501
Description Silicon NPN epitaxial planar type
Feature DSC5501 Silicon NPN epitaxial planar type For low frequency amplification DSC2501 in SMini3 type pack.
Manufacture Panasonic
Datasheet
Download DSC5501 Datasheet


DSC5501 Silicon NPN epitaxial planar type For low frequency DSC5501 Datasheet
Recommendation Recommendation Datasheet DSC5501 Datasheet




DSC5501
DSC5501
Silicon NPN epitaxial planar type
For low frequency amplification
DSC2501 in SMini3 type package
Features
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: E3
Unit: mm
Packaging
DSC5501×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Topr
Tstg
Rating
25
20
12
0.5
1
150
150
–40 to +85
–55 to +150
Unit
V
V
V
A
A
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
SMini3-F2-B
SC-85
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
25
Collector-emitter voltage (Base open)
VCEO IC = 1 mA, IB = 0
20
Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
12
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
ICBO
hFE
VCE(sat)
VBE(sat)
VCB = 25 V, IE = 0
VCE = 2 V, IC = 0.5 A
IC = 0.5 A, IB = 20 mA
IC = 0.5 A, IB = 50 mA
100
200 800
0.18 0.40
1.2
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT VCE = 10 V, IC = 50 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
150
6
ON resistance *3
Ron
1.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
RST 0
Rank
R S T No-rank
hFE
Marking Symbol
200 to 350
E3R
300 to 500
E3S
400 to 800
E3T
200 to 800
E3
Product of no-rank is not classified and have no marking symbol for rank.
*3: Ron measurement circuit
1 k
Unit
V
V
V
nA
V
V
MHz
pF
Publication date: March 2014
VB VV VA
f = 1 kHz
V = 0.3 V
Ron =
VB × 1000
VA VB
()
Ver. BED
1



DSC5501
DSC5501
250
DSC5501_PC-Ta
PC Ta
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
DSC5501_VCEsat-IC
VCE(sat) IC
10
IC / IB = 25
1
101
Ta = 85°C
40°C
102
1
25°C
10 102
Collector current IC (mA)
103
DSC5501_fT-IC
fT IC
250
VCE = 10 V
Ta = 25°C
200
150
100
50
0
0.1 1 10 100
Collector current IC (mA)
DSC5501_IC-VCE
IC VCE
600
500 IB = 1.0 mA
Ta = 25°C
0.8 mA
0.6 mA
400
300 0.4 mA
200 0.2 mA
100
0
0123456
Collector-emitter voltage VCE (V)
DSC5501_IC-VBE
IC VBE
500
VCE = 2 V
400
Ta = 85°C
300
25°C
40°C
200
100
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
DSC5501_VBEsat-IC
VBE(sat) IC
10
IC / IB = 10
DSC5501_hFE-IC
hFE IC
1 000
Ta = 85°C
VCE = 2 V
800
25°C
600
40°C
400
200
0
1 10 102 103
Collector current IC (mA)
DSC5501_Cob-VCB
Cob VCB
14
IE = 0
12 f = 1 MHz
Ta = 25°C
10
8
6
4
2
0
1 10 100
Collector-base voltage VCB (V)
1 40°C
25°C
Ta = 85°C
101
102
1
10 102 103
Collector current IC (mA)
Ver. BED
2







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