Dual N-channel MOS FET
DReovcisNioon. . T3 T4-EA-12667
FC6546010R
Dual N-channel MOS FET
For switching
Features Low drive voltage: 2.5 V d...
Description
DReovcisNioon. . T3 T4-EA-12667
FC6546010R
Dual N-channel MOS FET
For switching
Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol V6
Basic Part Number : Dual FK350601 (Individual)
Packaging Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25C
Parameter
Symbol
Drain-source breakdown voltage
VDSS
FET1 Gate-source breakdown voltage
VGSS
FET2 Drain current
ID
Pulse drain current
IDp
Total power dissipation
PT
Overall
Channel temperature Operating ambient temperature
Tch Topr
Storage temperature
Tstg
Rating 60
12 100 200 150 150 -40 to + 85 -55 to +150
Unit V V mA mA
mW
C C C
Product Standards
MOS FET
FC6546010R
2.0 0.2
654
Unit : mm
0.13
1.25 2.1
123
(0.65)(0.65) 1.3
0.7
1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) 3. Drain(FET2) 6. Drain(FET1)
Panasonic JEITA Code
SMi...
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