N-/P-channel MOSFET. FG6943010R Datasheet

FG6943010R MOSFET. Datasheet pdf. Equivalent


Part FG6943010R
Description Silicon N-/P-channel MOSFET
Feature DReovcisNioon. . T2 T4-EA-12659 FG6943010R Silicon N-channel MOSFET(FET1) Silicon P-channel MOSFET(F.
Manufacture Panasonic
Datasheet
Download FG6943010R Datasheet


DReovcisNioon. . T2 T4-EA-12659 FG6943010R Silicon N-channel FG6943010R Datasheet
Recommendation Recommendation Datasheet FG6943010R Datasheet




FG6943010R
DReovcisNioon. . T2 T4-EA-12659
FG6943010R
Silicon N-channel MOSFET(FET1)
Silicon P-channel MOSFET(FET2)
For switching
Product Standards
MOS FET
FG6943010R
1.6
0.2
654
Unit : mm
0.13
Features
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
123
(0.5) (0.5)
1.0
(0.6)
Marking Symbol V7
Basic Part Number FJ330301 + FK330301 (Individual)
Packaging
Embossed type (Thermo-compression sealing) 8 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25C
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
FET1 Drain current
VGS
ID
Pulse drain current
IDp
Drain-source voltage
VDS
Gate-source voltage
FET2 Drain current
VGS
ID
Pulse drain current
IDp
Total power dissipation
PT
Channel temperature
Overall
Operating ambient temperature
Tch
Topr
Storage temperature
Tstg
Rating
30
12
100
200
-30
12
-100
-200
125
150
-40 to + 85
-55 to +150
Unit
V
V
mA
mA
V
V
mA
mA
mW
C
C
C
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Panasonic
JEITA
Code
SSMini6-F3-B
SC-107C
SOT-666
Internal Connection
(D1) (G2) (S2)
6 54
FET1
FET2
1 23
(S1) (G1) (D2)
Pin name
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Established : 2010-06-30
Revised : 2013-10-10
Page 1 of 8



FG6943010R
DReovcisNioon. . T2 T4-EA-12659
Product Standards
MOS FET
FG6943010R
Electrical Characteristics Ta = 25C 3C
FET1
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source breakdown voltage
VDSS ID = 1 mA, VGS = 0
30
V
Drain-source cutoff current
IDSS VDS = 30 V, VGS = 0
1.0 A
Gate-source cutoff current
IGSS VGS = 10 V, VDS = 0
10 A
Gate threshold voltage
VTH ID = 1.0 A, VDS = 3.0 V
0.5 1.0 1.5
V
Drain-source ON resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 10 mA, VGS = 4.0 V
36
23
Forward transfer admittance
|Yfs| ID = 10 mA, VDS = 3.0 V
20 55
mS
Input capacitance
Ciss
12 pF
Output capacitance
Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF
Reverse transfer capacitance
Crss
3 pF
Turn-on time *1
ton VDD = 3 V, VGS = 0 to 3 V
ID = 10 mA
100 ns
Turn-off time *1
toff VDD = 3 V, VGS = 3 to 0 V
ID = 10 mA
100 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 FET1 Turn-on and Turn-off test circuit
VDD=3V
ID=10mA
RL=300Ω
Vin
VGS=0~3V
50Ω
G
D
S
Vout
Established : 2010-06-30
Revised : 2013-10-10
Page 2 of 8







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