Diode Limiter. 1GC1-8235 Datasheet

1GC1-8235 Limiter. Datasheet pdf. Equivalent


Part 1GC1-8235
Description 0-20 GHz Integrated Diode Limiter
Feature Agilent 1GC1-8235 0-20 GHz Integrated Diode Limiter TC231P Data Sheet Features • Two Independent Li.
Manufacture Agilent
Datasheet
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Agilent 1GC1-8235 0-20 GHz Integrated Diode Limiter TC231P D 1GC1-8235 Datasheet
Recommendation Recommendation Datasheet 1GC1-8235 Datasheet




1GC1-8235
Agilent 1GC1-8235
0-20 GHz Integrated Diode Limiter
TC231P
Data Sheet
Features
• Two Independent Limiters for
Single–ended or Differential
Signals
• Can be Biased for Adjustable Limit
Level and Signal Detection
• Minimum Group Delay.
Package Type:
Package Dimensions:
Package Thickness:
Pad (lead) Pitch:
Pad (lead) Width:
3 x 3 mm MLF-16/QFN-16
3 x 3 mm (118 x 118 mils)
0.90 mm (35 mils)
0.5 mm (20 mils)
0.20 mm (8 mils)
Absolute maximum ratings1
Symbol
Parameters/conditions
Min Max Units
Pin
Continuous RF Power
A &C Grounded
+17 dBm
DGND Grounded
+19
Description
The TC231 is a 20 GHz integrated diode
limiter that can be used to protect
sensitive RF circuits from excess RF
power, DC transients, and ESD. Two
limiters are provided on–chip to enable
single–ended or differential use.
The TC231 can be used as an unbiased
10 or 18 dBm passive limiter; it also
provides adjustable limiting and peak
power detection capabilities.
The TC231 has been designed for
minimal insertion loss. Group delay
characteristics have been optimized to
allow use in millimeter–wave analog
and gigabit digital designs..
IBIAS Continuous Forward Current into A1,A2,C1,C2,
DGND1-4
36 mA
VBIAS
Voltage at A1,A2,C1,C2, DGND1-4
-5 +5 V
Vrev Reverse Bias Voltage on Each Diode
8V
Ifwd Forward Bias Current on Each Diode
36 mA
Vin Voltage at IN1, IN2, OUT1,OUT2
+5 5
V
IIN Current at IN1, IN2, OUT1,OUT2
–80 80
mA
TA Ambient Temperature
+85 ºC
Tmax Maximum Assembly Temperature
240 ºC
Tstg Storage Temperature
-65 165 ºC
Notes:
1 Operation in excess of any one of these ratings may result in permanent damage to this device. For normal
operation, all combined bias and thermal conditions should be chosen such that the maximum junction
temperature (TJ) is not exceeded. TA = 25°C except for Top, Tst, and Tmax.
2 Sixty-second maximum



1GC1-8235
DC specifications/physical properties1
Symbol
Parameters/conditions
Vfwd_A
Vfwd_C
Limiting Diode Forward Voltage @ 0.1 mA
Vfwd_D
2-Diode Bias Stack Forward Voltage @0.1 mA
RS_A Limiting Diode Series Resistance @ 15mA
RS_C Including 2 ohm Resistor
IA,IC Limiting Diode Reverse Leakeage Current @-1V
RS_Series
Through Series Resistance
Notes:
1 Measured on wafer with Tchuck = 25°C unless otherwise noted.
Minimum
0.5
0.8
5
RF specifications1
Symbol
Parameters/conditions
Minimum
S11,S22
S21,S12
τd
P-1dB
Relection
Through Loss
Group Delay Flatness
1 dB Gain Compression
10 GHz
10 GHz
26.5 GHz
A&C Grounded
DGND Grounded
A&C Biased
-0.4
SHI
Second Harmonic Intercept
f0=5 GHz, A&C or
DGND Grounded
THI
Third Harmonic Intercept
f0=5 GHz, A&C or
DGND Grounded
TOI Third Order Intercept
f1=5 GHz, f2=5.25 GHz,
A&C or DGND Grounded
Notes:
1 Measured on wafer with Tchuck = 25°C unless otherwise noted.
ESD Specifications1
Symbol
Parameters/conditions
Minimum
ESD ESD No Damage
A&C Grounded
DGND Grounded
Notes:
1 Using Human Body Model as ESD generator. Circuit equivalent is 100 pF, 1500
Typical
0.64
1.15
12
0.1
1.2
Maximum
0.8
1.5
20
1.2
5.5
Typical
Maximum
-24 -20
-0.2
±0.5
10
18
Voltage Variable
70
32
32
Typical
2400
2800
Maximum
Units
V
V
uA
Units
dB
dB
pS
dBm
dBm
dBm
dBm
Units
V
2







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