HBT Amplifier. 1GC1-4030 Datasheet

1GC1-4030 Amplifier. Datasheet pdf. Equivalent


Part 1GC1-4030
Description DC - 10 GHz Medium Power Series Shunt HBT Amplifier
Feature Keysight 1GC1-4030 DC - 10 GHz Medium Power Series– Shunt HBT Amplifier Data Sheet Features –– Frequ.
Manufacture Keysight
Datasheet
Download 1GC1-4030 Datasheet


Keysight 1GC1-4030 DC - 10 GHz Medium Power Series– Shunt HB 1GC1-4030 Datasheet
Recommendation Recommendation Datasheet 1GC1-4030 Datasheet




1GC1-4030
Keysight 1GC1-4030
DC - 10 GHz Medium Power Series–
Shunt HBT Amplifier
Data Sheet
Features
– Frequency range: DC – 10 GHz
– Moderate gain: 11 dB
– P-1dB: +19 dBm
– Low 1/f noise corner: < 20 kHz
– Return loss:
Input: 20 dB
Output: 15 dB
– Single supply operation
VSupply > 4.8 volts



1GC1-4030
02 | Keysight | 1GC1-4030 DC - 10 GHz Medium Power Series-Shunt HBT Amplifier - Data Sheet
Description
The 1GC1-4030 is a DC – 10 GHz, 11 dB gain, feedback amplifier designed to be used as
a cascadable gain block for a variety of applications. The device consists of a modified
Darlington feedback pair which reduces the sensitivity to process variations and provides
50 ohm input/output port matches. Furthermore, this amplifier is fabricated using
HFTC’s Heterojunction Bipolar Transistor (HBT) process which provides excellent process
uniformity, reliability and 1/f noise performance. The device requires a single positive
supply voltage and generally operates Class-A for good distortion performance. DC
power dissipation is less than 0.68 watts.
Absolute maximum ratings1
(@ TA = 25 °C, unless otherwise indicated)
Symbol Parameters/conditions
Vcc Collector pad voltage
Iout Maximum collector current
Pin CW input power
TJ Maximum junction temperature
Top Operating temperature
Tbs2 Die backside temperature
Tstg Storage temperature
Tmax Maximum assembly temperature
Min Max
7
90
18
170
-55 +85
+85
65 165
+300
Units
Volts
mA
dBm
°C
°C
°C
°C
°C
1.  Operation in excess of any one of these conditions may result in permanent damage to this device.
2. 
MTTF > 5 x 105 hours
degrade MTTF.
@
Tbs
=
85
°C.
Operation
in
excess
of
maximum
backside
temperature
(Tbs)
will
Chip size: 610 x 460 μm
(24 x 18 mils)
Chip size tolerance: ±10 μm
(± 0.4 mils)
Chip thickness: 127 ±15 μm
(5.0 ± 0.6 mils)
Pad dimensions: 80 x 80 μm
(3.2 x 3.2 mils), or larger







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