Power MOSFET. RU75N08R Datasheet

RU75N08R MOSFET. Datasheet pdf. Equivalent


Part RU75N08R
Description N-Channel Advanced Power MOSFET
Feature RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ (Typ.) @VGS=10V •.
Manufacture Ruichips
Datasheet
Download RU75N08R Datasheet


RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • RU75N08R Datasheet
Recommendation Recommendation Datasheet RU75N08R Datasheet




RU75N08R
RU75N08R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 75V/80A,
RDS (ON) =8mΩ (Typ.) @VGS=10V
Ultra Low On-Resistance
Exceptional dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
175°C Operating Temperature
• Lead Free and Green Available
Applications
Switching Application Systems
Pin Description
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
75
±25
175
-55 to 175
80
320
80
76
176
88
0.85
841
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D – OCT., 2012
www.ruichips.com



RU75N08R
RU75N08R
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU75N08R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS= 75V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS= 10V, IDS=40A
75
2
V
1
µA
30
34V
±100 nA
8 11 m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss
Crss
td(ON)
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=20 A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=35V, RL=35,
IDS= 1A, VGEN= 10V,
RG=7
VDS=60V, VGS= 10V,
IDS=80A
1.2 V
50 ns
110 nC
1.4
3400
450
170
22
11
70
62
pF
ns
75
18 nC
25
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =58A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev.D – OCT., 2012
2
www.ruichips.com







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