S85N16R

SI-TECH SEMICONDUCTOR CO.,LTD S85N16R/S N-Channel MOSFET Features █ 85V,160A,Rds(on)(typ)=4.6mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range ...