N-Channel MOSFET. S10H12R Datasheet

S10H12R MOSFET. Datasheet pdf. Equivalent


Part S10H12R
Description N-Channel MOSFET
Feature SI-TECH SEMICONDUCTOR CO.,LTD S10H12R/S N-Channel MOSFET Features █100V,120A,Rds(on)(typ)=6.4mΩ @V.
Manufacture SI-TECH
Datasheet
Download S10H12R Datasheet


SI-TECH SEMICONDUCTOR CO.,LTD S10H12R/S N-Channel MOSFET F S10H12R Datasheet
Recommendation Recommendation Datasheet S10H12R Datasheet




S10H12R
SI-TECH SEMICONDUCTOR CO.,LTD
S10H12R/S
N-Channel MOSFET
Features
100V,120A,Rds(on)(typ)=6.4m@Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics.These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management
in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25 )
Derating Factor above 25
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Value
100
120
84
420
±25
839
254
1.69
-55 to +175
-55 to +175
Max.
0.59
63
Units
V
A
A
A
V
mJ
W
W/
Units
/W
/W
- 1 - Mar.2016



S10H12R
SI-TECH SEMICONDUCTOR CO.,LTD
S10H12R/S
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance -
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VDS=75V, VGS=0V
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDD=60V
VGS=10V
ID=80A
(Note 3)
VDD=37.5V,VGS=10V
ID=45A,RG=4.7
TC=25
(Note 3)
VDS=25V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
100 -
-V
- - 1 uA
- - 100 nA
- - -100 nA
2.5 - 3.5 V
- 6.5 7.5 m
- 114 - nC
- 17 - nC
- 26 - nC
- 23 - ns
- 34 - ns
- 75 - ns
- 44 - ns
- 9250 -
pF
- 1580 -
pF
- 723 - pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
VGS=0V, IS=45A
tr r Reverse Recovery Time
Qr r Reverse Recovery Charge
VGS=0V, IS=45A
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, VDD=50V, RG=25 Ω, Starting TJ=25
3. Pulse Width 300 us; Duty Cycle2%
Min. Typ. Max. Units
- - 120 A
- - 420 A
- - 1.3 V
- 45
ns
- 96
nC
- 2 - Mar.2016







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