N-Channel MOSFET. S10H050R Datasheet

S10H050R MOSFET. Datasheet pdf. Equivalent


Part S10H050R
Description N-Channel MOSFET
Feature SI-TECH SEMICONDUCTOR CO.,LTD S10H050R/S N-Channel MOSFET Features █100V,130A,Rds(on)(typ)=5m @V.
Manufacture SI-TECH
Datasheet
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SI-TECH SEMICONDUCTOR CO.,LTD S10H050R/S N-Channel MOSFET S10H050R Datasheet
Recommendation Recommendation Datasheet S10H050R Datasheet




S10H050R
SI-TECH SEMICONDUCTOR CO.,LTD
S10H050R/S
N-Channel MOSFET
Features
100V,130A,Rds(on)(typ)=5m@Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
Split-Gate MOS Technology
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Split-Gate MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics.These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management
in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current (TC=25)
Continuous Drain Current (TC=100)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25)
Derating Factor above 25
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Value
100
130
91
520
25
687
178
1.19
-55 to +175
-55 to +175
Symbol
Rth j-c
Rth c-s
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Max.
0.84
0.5
62.0
-1-
Units
V
A
A
A
V
mJ
W
W/
Units
/ W
/ W
/ W
Jun.2017



S10H050R
SI-TECH SEMICONDUCTOR CO.,LTD
S10H050R/S
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance -
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS=0V, ID=250uA
VDS=100V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDD=40V
VGS=10V
ID=50A
(Note 3)
VDD=40V,VGS=10V
ID=45A,RG=3
TC=25
(Note 3)
VDS=0V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
100 115
-
V
- - 1 uA
- - 100 nA
- - -100 nA
2.2 3 3.8 V
- 5 6 m
- 86
- nC
- 22
- nC
- 19
- nC
- 41
- ns
- 37
- ns
- 65
- ns
- 24
- ns
- 6004 -
pF
- 837 - pF
- 31
- pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
VGS=0V, IS=50A
tr r Reverse Recovery Time
VGS=0V, IS=50A
Qr r Reverse Recovery Charge
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, VDD=50V, RG=25 Ω, Starting TJ=25
3. Pulse Width 300 us; Duty Cycle2%
Min. Typ. Max. Units
- - 130 A
- - 520 A
- 0.89 1.2 V
- 72
- ns
- 145 - nC
- 2 - Jun.2017







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