Low-Dropout Regulator. TCR4S25DWBG Datasheet

TCR4S25DWBG Regulator. Datasheet pdf. Equivalent


Part TCR4S25DWBG
Description 200 mA CMOS Low-Dropout Regulator
Feature TCR4S12DWBG~TCR4S36DWBG TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4S12DWBG ~ TCR.
Manufacture Toshiba
Datasheet
Download TCR4S25DWBG Datasheet


TCR4S12DWBG~TCR4S36DWBG TOSHIBA CMOS Linear Integrated Circu TCR4S25DWBG Datasheet
Recommendation Recommendation Datasheet TCR4S25DWBG Datasheet




TCR4S25DWBG
TCR4S12DWBG~TCR4S36DWBG
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR4S12DWBG ~ TCR4S36DWBG
200 mA CMOS Low-Dropout Regulator
The TCR4S12DWBG to TCR4S36DWBG are CMOS
general-purpose single-output voltage regulators with an on/off
control input, featuring low dropout voltage and low quiescent bias
current. The TCR4S12WBG to TCR4S36WBG can be enabled and
disabled via the CONTROL pin.
These voltage regulators are available in fixed output voltages
between 1.2 V and 3.6 V in 0.05-V steps and capable of driving up
to 200 mA. They feature overcurrent protection and auto-discharge.
The TCR4S12DWBG to TCR4S36DWBG are offered in the
compact WCSP ( 0.79 mm x 0.79 mm x 0.50 mm ) and allow the use
of small ceramic input and output capacitors. Thus, these devices
are ideal for portable applications that require high-density board
assembly such as cellular phones.
S-UFBGA4-0101-0.40A01
WCSP4
Weight: 0.7 mg (typ)
Features
Low quiescent bias current ( IB = 50 μA (typ.) at IOUT = 0 mA )
Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode )
Low dropout voltage ( VIN - VOUT = 90 mV (typ.) at TCR4S25DWBG, IOUT = 50 mA )
High ripple rejection ratio ( R.R = 80 dB (typ) at IOUT = 10 mA, f =1kHz )
Low output noise voltage (VNO = 30 μVrms (typ.) at TCR4S25DWBG, IOUT = 10 mA, 10 Hz f 100 kHz)
Auto-discharge
Control pull-down resistor
Overcurrent protection
Ceramic capacitors can be used ( CIN = 0.1 μF, COUT =1.0 μF )
Very small package, WCSP ( 0.79 mm x 0.79 mm x 0.50 mm )
Pin Assignment (top view)
CONTROL VIN
GND
VOUT
1
Start of commercial production
2010-07
2014-03-01



TCR4S25DWBG
List of Products Number and Marking
Products No.
TCR4S12DWBG
TCR4S13DWBG
TCR4S14DWBG
TCR4S15DWBG
TCR4S16DWBG
TCR4S17DWBG
TCR4S18DWBG
TCR4S19DWBG
TCR4S20DWBG
TCR4S21DWBG
TCR4S22DWBG
TCR4S23DWBG
TCR4S24DWBG
TCR4S25DWBG
Marking
B3
B4
B5
BA
BB
BD
BE
BF
BG
BH
BI
BK
BL
BM
Products No.
TCR4S26DWBG
TCR4S27DWBG
TCR4S28DWBG
TCR4S285DWBG
TCR4S29DWBG
TCR4S295DWBG
TCR4S30DWBG
TCR4S31DWBG
TCR4S32DWBG
TCR4S33DWBG
TCR4S34DWBG
TCR4S35DWBG
TCR4S36DWBG
TCR4S12DWBG~TCR4S36DWBG
Marking (top view)
Marking
BN
BO
BP
B7
BR
B6
BS
BT
BV
BW
BX
BY
BZ
Example: TCR4S15DWBG (1.5 V output)
BA
Index
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Input voltage
Control voltage
Output voltage
Output current
Power dissipation
Operation temperature range
Junction temperature
Storage temperature range
Symbol
VIN
VCT
VOUT
IOUT
PD
Topr
Tj
Tstg
Rating
6 (Note 1)
-0.3 to VIN
-0.3 to VIN + 0.3
200
800 (Note 2)
40 to 85
150
55 to 150
Unit
V
V
V
mA
mW
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): VIN for 1.2 V to 1.4V output product is 5.5 V.
(Note 2):
Rating at mounting on a board
(Glass epoxy board dimension: 40mm x 40mm, both sides of board
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole: diameter 0.5mm x 28)
2 2014-03-01







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