Buffer Amplifier. LH0033-200 Datasheet

LH0033-200 Amplifier. Datasheet pdf. Equivalent


Part LH0033-200
Description Fast Buffer Amplifier
Feature LH0033-200 Fast Buffer Amplifier January 1989 LH0033-200 Fast Buffer Amplifier General Descriptio.
Manufacture National Semiconductor
Datasheet
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LH0033-200 Fast Buffer Amplifier January 1989 LH0033-200 F LH0033-200 Datasheet
Recommendation Recommendation Datasheet LH0033-200 Datasheet




LH0033-200
January 1989
LH0033-200 Fast Buffer Amplifier
General Description
The LH0033-200 is a high speed FET input voltage follow-
er buffer designed to provide high current drive at frequen-
cies from DC to over 100 MHz The LH0033-200 will provide
g10 mA into 1 kX loads (g100 mA peak) at slew rates of
1500 V ms In addition the LH0033-200 exhibits excellent
phase linearity up to 20 MHz
It is intended to fulfill a wide range of buffer applications
such as high speed line drivers video impedance transfor-
mation nuclear instrumentation amplifiers op amp isolation
buffer for driving reactive loads and high impedance input
buffers for high speed A D’s and comparators For addition-
al applications information see AN-48
These devices are constructed using specially selected
junction FETs and active laser trimming to achieve guaran-
teed performance specifications The LH0033-200 is speci-
fied for b55 C to a200 C operation and is available in a
1 5W TO-8 metal package
Features
Y 200 C operation
Y Fast
Y Wide range single or dual supply
Y Wide power bandwidth
Y High output drive
Y Low phase linearity
Y Fast rise times
Y High current gain
Y High input resistance
Y Expected life in operation
1000 V ms
DC to 100 MHz
g10V with 50X load
2
2 ns
120 dB
1010X
160 hours
Advantages
Y Only a10V supply needed for 5V p-p out
Y Speed does not degrade system performance
Y Wide data range for phase-encoded systems
Y Output drive adequate for most loads
Y Single pre-calibrate package
Connection Diagram
Metal Can Package
Top View
Case is electrically isolated
Order Number LH0033G-200
See NS Package Number G12B
TL K 8786 – 1
C1995 National Semiconductor Corporation TL K 8786
RRD-B30M115 Printed in U S A



LH0033-200
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage (Va b Vb)
40V
Maximum Power Dissipation
1 5W
Maximum Junction Temperature
225 C
Input Voltage
Continuous Output Current
Peak Output Current
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering 10 sec )
ESD rating is to be determined
Equal to Supplies
g100 mA
g200 mA
b55 C to a125 C
b65 C to a225 C
260 C
DC Electrical Characteristics VS e g15V TMIN s TA s TMAX unless otherwise specified (Note 2)
Symbol
Parameter
Conditions
Limits
Min Typ Max
Units
VOS
Output Offset Voltage
RS e 100X (Note 1)
40 mV
IB
Input Bias Current
VIN e 0V TJ e TA e TMAX
50 nA
AV Voltage Gain
VO e g10V RS e 100X RL e 1 0 kX
0 90
0 98
VV
ZIN Input Impedance RL e 1 kX
1011
X
ZOUT
Output Impedance
VIN e g1 0V RL e 1 0 kX
60 X
VO
Output Voltage Swing
VI e g14V RL e 1 0 kX
g12
V
IS Supply Current
VIN e 0V
20 25 mA
Note 1 When supply voltages are g15V no load operating junction temperature may rise 40 C–60 C above ambient and more under load conditions Accordingly
VOS may change one to several mV and IB will change significantly during warm-up Refer to IB vs temperature graph for expected values
Note 2 In order to limit maximum junction temperature to a225 C it may be necessary to operate with VS k g15 when TA or TC exceeds specific values
depending on the PD within the device package Total PD is the sum of quiescent and load-related dissipation
AC Electrical Characteristics TC e 25 C VS e g15V RS e 50X RL e 1 0 kX
Limits
Symbol
Parameter
Conditions
LH0033
Min Typ
SR
Slew Rate
VIN e g10V
1000
1500
BW
Bandwidth
VIN e 1 0 Vrms
100
Max
Units
V ms
MHz
2







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