Attenuator Diodes. HSMP-381E Datasheet

HSMP-381E Diodes. Datasheet pdf. Equivalent

HSMP-381E Datasheet
Recommendation HSMP-381E Datasheet
Part HSMP-381E
Description Surface Mount RF PIN Low Distortion Attenuator Diodes
Feature HSMP-381E; HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applic.
Manufacture AVAGO
Datasheet
Download HSMP-381E Datasheet




AVAGO HSMP-381E
HSMP-381x, 481x
Surface Mount RF PIN
Low Distortion Attenuator Diodes
Data Sheet
Description/Applications
The HSMP-381x series is specifically designed for low dis-
tortion attenuator applications. The HSMP-481x products
feature ultra low parasitic inductance in the SOT-23 and
SOT-323 packages. They are specifically designed for use
at frequencies which are much higher than the upper limit
for conventional diodes.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic, carrier
lifetime.
Features
x Diodes Optimized for:
– Low Distortion Attenuating
– Microwave Frequency Operation
x Surface Mount Packages
– Single and Dual Versions
– Tape and Reel Options Available
x Low Failure in Time (FIT) Rate[1]
x Lead free
Package Lead Code Identification,
SOT-23
(Top View)
Note:
1. For more information see the Surface Mount PIN Reliability Data
Sheet.
Package Lead Code Identification,
SOT-323
(Top View)
SINGLE
3
SERIES
3
SINGLE
SERIES
12
#0
COMMON
ANODE
3
12
#2
COMMON
CATHODE
3
B
COMMON
ANODE
C
COMMON
CATHODE
12
#3
REVERSE
SERIES
3
12
#4
DUAL
CATHODE
3
E
DUAL CATHODE
F
12
#5
12
4810
481B



AVAGO HSMP-381E
Absolute Maximum Ratings[1] T = +25°C
C
Symbol Parameter
Unit SOT-23
SOT-323
If
Forward Current (1 μs Pulse)
Amp 1
1
P Peak Inverse Voltage
IV
V
Same as V
Same as V
BR BR
T Junction Temperature
j
°C 150
150
T Storage Temperature
stg
°C
-65 to 150
-65 to 150
Tjc Thermal Resistance [2]
°C/W 500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications T = +25°C (Each Diode)
C
Conventional Diodes
Part
Number
HSMP-
Package
Marking
Code
3810 E0
3812 E2
3813 E3
3814 E4
3815 E5
381B E0
381C E2
381E E3
381F E4
Test Conditions
Lead
Code
0
2
3
4
5
B
C
E
F
Configuration
Single
Series
Common Anode
Common Cathode
Reverse Series
Single
Series
Common Anode
Common Cathode
Minimum
Breakdown
Voltage VBR
(V)
100
V =V
R BR
Measure
I ≤ 10uA
R
Maximum
Total
Capacitance
CT (pF)
0.35
V = 50V
R
f = 1MHz
Minimum
Resistance
at
IF = 0.01mA,
RH (Ω)
1500
I = 0.01mA
F
f = 100MHz
Maximum
Resistance
at
IF = 20mA,
RL (Ω)
10
I = 20mA
F
f = 100MHz
Maximum
Resistance
at
IF = 100mA,
RT (Ω)
3.0
I = 100mA
F
f = 100MHz
Resistance
at
IF = 1mA,
RM (Ω)
48 to 70
I = 1mA
F
f = 100MHz
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Minimum Maximum Series
Typical Maximum Typical
Part Package
Breakdown Series Resistance
Total
Total Total
Number Marking Lead
HSMP-
Code Code Configuration
Voltage
VBR (V)
Resistance
RS (Ω)
IF = 1mA,
RM (Ω)
Capacitance Capacitance Inductance
CT (pF)
CT (pF)
LT (nH)
4810
481B
EB B Dual Cathode
100
EB B Dual Cathode
3
48 - 70
0.35
0.4
1
Test Conditions
V =V
R BR
Measure
IR ≤ 10μA
I = 100mA
F
f=
100MHz
I = 1mA
F
f = 100MHz
V = 50V
R
f = 1MHz
V = 50V
R
f = 1MHz
f=
500MHz
- 3GHz
2



AVAGO HSMP-381E
Typical Parameters at T = 25°C
C
Part Number
HSMP-
381x
Test Conditions
Series Resistance
RS (Ω)
53
IF = 1 mA
f = 100 MHz
Carrier Lifetime
W (ns)
1500
IF = 50 mA
I = 250 mA
R
Reverse Recovery Time
Trr (ns)
300
VR = 10 V
I = 20 mA
F
90% Recovery
Total
Capacitance
CT (pF)
0.27 @ 50 V
f = 1 MHz
Typical Parameters at T = 25°C (unless otherwise noted), Single Diode
C
0.45
0.40
0.35
1 MHz
0.30
10000
1000
100
TA = +85 C
TA = +25 C
TA = –55 C
0.25 30 MHz
0.20
frequency>100 MHz
0.15
0 2 4 6 8 10 12 14 16 18 20
REVERSE VOLTAGE (V)
Figure 1. RF Capacitance vs. Reverse
Bias.
10
1
0.01 0.1 1 10 100
IF – FORWARD BIAS CURRENT (mA)
Figure 2. RF Resistance vs. Forward
Bias Current, f = 100MHz
120
Diode Mounted as a
110 Series Attenuator
in a 50 Ohm Microstrip
100 and Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
DIODE RF RESISTANCE (OHMS)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
100 Typical Applications for Multiple Diode Products
VARIABLE BIAS
10
1
0.1 INPUT
0.01
0
125 C 25 C –50 C
0.2 0.4 0.6 0.8 1.0 1.2
VF – FORWARD VOLTAGE (mA)
Figure 4. Forward Current vs. Forward
Voltage.
FIXED
BIAS
VOLTAGE
RF IN/OUT
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.
Notes:
3. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution.
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)