Document
TELEFUNKEN Semiconductors
BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances
Applications
Voltage stabilization
94 9373
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V
Rev. A1: 12.12.1994
1
BZT55C...
Type BZT55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75
1)
TELEFUNKEN Semiconductors
rzjk at W < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500
2)
VZnorm V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75
IZT for VZT 1) and rzjT mA V W 5 2.28 to 2.56 < 85 5 2.5 to 2.9 < 85 5 2.8 to 3.2 < 90 5 3.1 to 3.5 < 90 5 3.4 to 3.8 < 90 5 3.7 to 4.1 < 90 5 4.0 to 4.6 < 90 5 4.4 to 5.0 < 80 5 4.8 to 5.4 < 60 5 5.2 to 6.0 < 40 5 5.8 to 6.6 < 10 5 6.4 to 7.2 <8 5 7.0 to 7.9 <7 5 7.7 to 8.7 <7 5 8.5 to 9.6 < 10 5 9.4 to 10.6 < 15 5 10.4 to 11.6 < 20 5 11.4 to 12.7 < 20 5 12.4 to 14.1 < 26 5 13.8 to 15.6 < 30 5 15.3 to 17.1 < 40 5 16.8 to 19.1 < 50 5 18.8 to 21.2 < 55 5 20.8 to 23.3 < 55 5 22.8 to 25.6 < 80 5 25.1 to 28.9 < 80 5 28 to 32 < 80 5 31 to 35 < 80 5 34 to 38 < 80 2.5 37 to 41 < 90 2.5 40 to 46 < 90 2.5 44 to 50 < 110 2.5 48 to 54 < 125 2.5 52 to 60 < 135 2.5 58 to 66 < 150 2.5 64 to 72 < 200 2.5 70 to 79 < 250
IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5
IR and IR 2) at mA mA < 100 < 50 < 10 < 50 <4 < 40 <2 < 40 <2 < 40 <2 < 40 <1 < 20 < 0.5 < 10 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <5 < 0.1 <5 < 0.1 <5 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10
VR V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56
TKVZ %/K –0.09 to –0.06 –0.09 to –0.06 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.06 to –0.03 –0.05 to +0.02 –0.02 to +0.02 –0.05 to +0,05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12
tp/T ≤ 100 ms, tighter tolerances available on request.
at Tj = 150°C
2
Rev. A1: 12.12.1994
TELEFUNKEN Semiconductors
BZT55C...
1000 DV Z – Voltage Change ( mV )
Typical Characteristics (Tj = 25_C unless otherwise specified)
600 Ptot – Total Power Dissipation ( mW ) 500 400 300 200 100 0 0
95 9602
Tj = 25°C 100
IZ=5mA 10
1 40 80 120 160 200
95 9598
0
5
10
15
20
25
Tamb – Ambient Temperature ( °C )
VZ – Z-Voltage ( V )
Figure 1 : Total Power Dissipation vs. Ambient Temperature
Figure 2 : Typical Change of Working Voltage under Operating Conditions at Tamb=25°C TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) 15
1.3 VZtn – Relative Voltage Change VZtn=VZt/VZ(25°C) 1.2
TKVZ=10 10–4/K 8 6 10–4/K 10–4/K 10–4/K 10–4/K
10
1.1
4 2
5 IZ=5mA 0
1.0 0.9 0.8 –60
0 –2 10–4/K –4 10–4/K
–5 0 10 20 30 40 50 VZ – Z-Voltage ( V )
0
60
120
180
240
95 9599
Tj – Junction Temperature ( °C )
95 9600
Figure 3 : Typical Change of Working Voltage vs. Junction Temperature
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
200 C D – Diode Capacitance ( pF ) IF – Forward Current ( mA )
100
150 VR = 2V 100 Tj = 25°C
10 Tj = 25°C 1
0.1 0.01 0.001
50
0 0
95 9601
5
10
15
20
25
95 9605
0
0.2
0.4
0.6
0.8
1.0
VZ – Z-Voltage ( V ) Figure 5 : Diode Capacitance vs. Z–Voltage
VF – Forward Voltage ( V ) Figure 6 : Forward Current vs. Forward Voltage
Rev. A1: 12.12.1994
3
BZT55C...
100 50
TELEFUNKEN Semiconductors
IZ – Z-Current ( mA )
Ptot=500mW Tamb=25°C 60
IZ – Z-Current ( mA )
80
40
Ptot=500mW Tamb=25°C
30
40 20 0 0 4 8 12 16 20
20 10 0 15 20 25 30 35
95 9604
VZ – Z-Voltage ( V ) Figure 7 : Z–Current vs. Z–Voltage
95 9607
VZ – Z-Voltage ( V ) Figure 8 : Z–Current vs. Z–Voltage
1000 r Z – Differential Z-Resistance ( W )
IZ=1mA 100
5mA 10 10mA
1 0
95 9606
Tj = 25°C 5 10 15 20 25
VZ – Z-Voltage ( V ) Figure 9 : .