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BZT55C16 Dataheets PDF



Part Number BZT55C16
Manufacturers TEMIC Semiconductors
Logo TEMIC Semiconductors
Description Silicon Epitaxial Planar Z-Diodes
Datasheet BZT55C16 DatasheetBZT55C16 Datasheet (PDF)

TELEFUNKEN Semiconductors BZT55C... Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications Voltage stabilization 94 9373 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Therma.

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TELEFUNKEN Semiconductors BZT55C... Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications Voltage stabilization 94 9373 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Rev. A1: 12.12.1994 1 BZT55C... Type BZT55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) TELEFUNKEN Semiconductors rzjk at W < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500 2) VZnorm V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT for VZT 1) and rzjT mA V W 5 2.28 to 2.56 < 85 5 2.5 to 2.9 < 85 5 2.8 to 3.2 < 90 5 3.1 to 3.5 < 90 5 3.4 to 3.8 < 90 5 3.7 to 4.1 < 90 5 4.0 to 4.6 < 90 5 4.4 to 5.0 < 80 5 4.8 to 5.4 < 60 5 5.2 to 6.0 < 40 5 5.8 to 6.6 < 10 5 6.4 to 7.2 <8 5 7.0 to 7.9 <7 5 7.7 to 8.7 <7 5 8.5 to 9.6 < 10 5 9.4 to 10.6 < 15 5 10.4 to 11.6 < 20 5 11.4 to 12.7 < 20 5 12.4 to 14.1 < 26 5 13.8 to 15.6 < 30 5 15.3 to 17.1 < 40 5 16.8 to 19.1 < 50 5 18.8 to 21.2 < 55 5 20.8 to 23.3 < 55 5 22.8 to 25.6 < 80 5 25.1 to 28.9 < 80 5 28 to 32 < 80 5 31 to 35 < 80 5 34 to 38 < 80 2.5 37 to 41 < 90 2.5 40 to 46 < 90 2.5 44 to 50 < 110 2.5 48 to 54 < 125 2.5 52 to 60 < 135 2.5 58 to 66 < 150 2.5 64 to 72 < 200 2.5 70 to 79 < 250 IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IR and IR 2) at mA mA < 100 < 50 < 10 < 50 <4 < 40 <2 < 40 <2 < 40 <2 < 40 <1 < 20 < 0.5 < 10 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <5 < 0.1 <5 < 0.1 <5 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 VR V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 TKVZ %/K –0.09 to –0.06 –0.09 to –0.06 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.06 to –0.03 –0.05 to +0.02 –0.02 to +0.02 –0.05 to +0,05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 tp/T ≤ 100 ms, tighter tolerances available on request. at Tj = 150°C 2 Rev. A1: 12.12.1994 TELEFUNKEN Semiconductors BZT55C... 1000 DV Z – Voltage Change ( mV ) Typical Characteristics (Tj = 25_C unless otherwise specified) 600 Ptot – Total Power Dissipation ( mW ) 500 400 300 200 100 0 0 95 9602 Tj = 25°C 100 IZ=5mA 10 1 40 80 120 160 200 95 9598 0 5 10 15 20 25 Tamb – Ambient Temperature ( °C ) VZ – Z-Voltage ( V ) Figure 1 : Total Power Dissipation vs. Ambient Temperature Figure 2 : Typical Change of Working Voltage under Operating Conditions at Tamb=25°C TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) 15 1.3 VZtn – Relative Voltage Change VZtn=VZt/VZ(25°C) 1.2 TKVZ=10 10–4/K 8 6 10–4/K 10–4/K 10–4/K 10–4/K 10 1.1 4 2 5 IZ=5mA 0 1.0 0.9 0.8 –60 0 –2 10–4/K –4 10–4/K –5 0 10 20 30 40 50 VZ – Z-Voltage ( V ) 0 60 120 180 240 95 9599 Tj – Junction Temperature ( °C ) 95 9600 Figure 3 : Typical Change of Working Voltage vs. Junction Temperature Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage 200 C D – Diode Capacitance ( pF ) IF – Forward Current ( mA ) 100 150 VR = 2V 100 Tj = 25°C 10 Tj = 25°C 1 0.1 0.01 0.001 50 0 0 95 9601 5 10 15 20 25 95 9605 0 0.2 0.4 0.6 0.8 1.0 VZ – Z-Voltage ( V ) Figure 5 : Diode Capacitance vs. Z–Voltage VF – Forward Voltage ( V ) Figure 6 : Forward Current vs. Forward Voltage Rev. A1: 12.12.1994 3 BZT55C... 100 50 TELEFUNKEN Semiconductors IZ – Z-Current ( mA ) Ptot=500mW Tamb=25°C 60 IZ – Z-Current ( mA ) 80 40 Ptot=500mW Tamb=25°C 30 40 20 0 0 4 8 12 16 20 20 10 0 15 20 25 30 35 95 9604 VZ – Z-Voltage ( V ) Figure 7 : Z–Current vs. Z–Voltage 95 9607 VZ – Z-Voltage ( V ) Figure 8 : Z–Current vs. Z–Voltage 1000 r Z – Differential Z-Resistance ( W ) IZ=1mA 100 5mA 10 10mA 1 0 95 9606 Tj = 25°C 5 10 15 20 25 VZ – Z-Voltage ( V ) Figure 9 : .


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