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BZT55C56 Datasheet, Equivalent, Planar Z-Diodes.

Silicon Epitaxial Planar Z-Diodes

Silicon Epitaxial Planar Z-Diodes

 

 

 

Part BZT55C56
Description Silicon Epitaxial Planar Z-Diodes
Feature TELEFUNKEN Semiconductors BZT55C Si licon Epitaxial Planar Z–Diodes Feat ures D Very sharp reverse characteristi c D Low reverse current level D Very hi gh stability D Low noise D Available wi th tighter tolerances Applications Vol tage stabilization 94 9373 Absolute M aximum Ratings Tj = 25_C Parameter Powe r dissipation Z–current Junction temp erature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65 +175 Unit mW mA °C °C Maximum Therma l Resistance Tj = 25_C Parameter Juncti on ambient Test Conditions on PC board 50mmx50mmx1.
6mm Symbol .
Manufacture TEMIC Semiconductors
Datasheet
Download BZT55C56 Datasheet
Part BZT55C56
Description Silicon Epitaxial Planar Z-Diodes
Feature TELEFUNKEN Semiconductors BZT55C Si licon Epitaxial Planar Z–Diodes Feat ures D Very sharp reverse characteristi c D Low reverse current level D Very hi gh stability D Low noise D Available wi th tighter tolerances Applications Vol tage stabilization 94 9373 Absolute M aximum Ratings Tj = 25_C Parameter Powe r dissipation Z–current Junction temp erature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65 +175 Unit mW mA °C °C Maximum Therma l Resistance Tj = 25_C Parameter Juncti on ambient Test Conditions on PC board 50mmx50mmx1.
6mm Symbol .
Manufacture TEMIC Semiconductors
Datasheet
Download BZT55C56 Datasheet

BZT55C56

BZT55C56
BZT55C56

BZT55C56

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