BZV13

DISCRETE SEMICONDUCTORS DATA SHEET age M3D050 BZV10 to BZV14 Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 21 Philips Semiconductors Product specification Voltage reference diodes FEATURES Temperature compensated Reference voltage range: 5.9 to 6.5 V (typ. 6.2 V) Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage BZV10 to BZV14 DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. a MAM216 APPLICATION Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − 0 MAX. 50 400 +200 200 +70 UNIT mA mW °C °C °C 1996 Mar 21 2 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Vref ∆Vref PARAMETER reference voltage reference voltage excursion BZV10 BZV11 BZV12 BZV13 BZV14 SZ temperature coefficient BZV10 BZV11 BZV12 BZV13 BZV14 rdif Notes differential resistance IZ = 2 mA; see Fig.3 IZ = 2 mA: see Fig.2; notes 1 and 2 CONDITIONS IZ =2 mA IZ =2 mA; test points for Tamb: 0; +25; +70 °C; notes 1 and 2 MIN. 5.9 − − − − − − − − − − − ...