Voltage reference diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D050
BZV10 to BZV14 Voltage reference diodes
Product specification Supersedes...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D050
BZV10 to BZV14 Voltage reference diodes
Product specification Supersedes data of March 1991 1996 Mar 21
Philips Semiconductors
Product specification
Voltage reference diodes
FEATURES Temperature compensated Reference voltage range: 5.9 to 6.5 V (typ. 6.2 V) Low temperature coefficient range: max. 0.0005 to 0.01 %/K.
k handbook, halfpage
BZV10 to BZV14
DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package.
a
MAM216
APPLICATION Voltage reference sources in measuring instruments such as digital voltmeters.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − 0 MAX. 50 400 +200 200 +70 UNIT mA mW °C °C °C
1996 Mar 21
2
Philips Semiconductors
Product specification
Voltage reference diodes
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Vref ∆Vref PARAMETER reference voltage reference voltage excursion BZV10 BZV11 BZV12 BZV13 BZV14 SZ temperature coefficient BZV10 BZV11 BZV12 BZV13 BZV14 rdif Notes differential resistance IZ = 2 mA; see Fig.3 IZ = 2 mA: see Fig.2; notes 1 and 2 CONDITIONS IZ =2 mA IZ =2 mA; test points for Tamb: 0; +25; +70 °C; notes 1 and 2 MIN. 5.9 − − − − − − − − − − −
...
Similar Datasheet