MIP4170MD

Intelligent Power Devices (IPDs) MIP4170MD Silicon MOS FET type integrated circuit  Features  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.  Reduces circuit power consumption by supplying IPD inner circuit current from input terminal of auxiliary winding voltage (VCC)  Detects over voltage protection when auxiliary winding voltage exceeds setting value, which stops oscillation at latch mode.  Built-in timer latching function and over heating protective function under over load.  Applications  For artificial resonance power source  Absolute Maximum Ratings Ta = 25°C±3°C Parameter Symbol Rating Unit DRAIN voltage VD - 0.3 to +700 V VCC voltage VCC - 0.3 to +45 V VDD voltage VDD - 0.3 to +9 V FB voltage VFB - 0.3 to +6 V TR voltage VTR - 0.4 to +10 V Drain peak current * IDP 4.8 A Channel temperature Tch 150 °C Storage temperatur...