Silicon MOSFET
MIP5530MD
Silicon MOS FET type integrated circuit
Features
Possible to correspond to the output about 30 W by the w...
Description
MIP5530MD
Silicon MOS FET type integrated circuit
Features
Possible to correspond to the output about 30 W by the world wide input.
(with heat sink) Typical LED peak current : 1.5 A With built-in LED short-circuit protection function. Input voltage detecting function is used, and the protection at a low input
voltage is possible. Possible to correspond to the PWM dimming method and the triac light dimmer. Over temperature protection for IPD (Auto-restart)
Applications
LED-lighting HB-LED drive circuit
Absolute Maximum Ratings Ta = 25°C±3°C
Parameter
Symbol Rating
DRAIN voltage
VD-S - 0.3 to +700
VIN voltage
VIN-S - 0.3 to +440
VDD voltage
VDD-S - 0.3 to +8.0
EX voltage
VEX-S - 0.3 to +7.2
CL voltage
VCL-S - 0.3 to +7.2
Peak drain current *
IDP 3.5
Channel temperature
Tch 150
Storage temperature
Tstg -55 to +150
Note) *: IDP is guaranteed at the pulse width narrower than MIN(PW).
Unit V V V V V A °C °C
Block Di...
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