AT49BV001

Features Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture – One 16-Kbyte Boot Block with Programming Lockout – Two 8-Kbyte Parameter Blocks – Two Main Memory Blocks (32K, 64K Bytes) Fast Erase Cycle Time – 10 Seconds Byte-by-byte Programming – 30 µs/Byte Typical Hardware Data Protection DATA Polling for End of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less th...