Flash Memory. AT49BV001AN Datasheet

AT49BV001AN Datasheet PDF, Equivalent


Part Number

AT49BV001AN

Description

1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Manufacture

ATMEL

Total Page 18 Pages
PDF Download
Download AT49BV001AN Datasheet


AT49BV001AN Datasheet
Features
Single Supply for Read and Write: 2.7 to 3.6V
Fast Read Access Time – 55 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Two Main Memory Blocks (32K Bytes, 64K Bytes)
Fast Erase Cycle Time – 3 Seconds
Byte-by-Byte Programming – 30 µs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.
Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
55 ns with power dissipation of just 54 mW over the industrial temperature range.
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
RESET
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
No Connect
PLCC Top View
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
*RESET
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV001A
AT49BV001AN
AT49BV001AT
AT49BV001ANT
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
Note: *This pin is a NC on the AT49BV001AN(T).
Rev. 3364C–FLASH–9/03
1

AT49BV001AN Datasheet
Block Diagram
When the device is deselected, the CMOS standby current is less than 50 µA. For the
AT49BV001AN(T), pin 1 for the PLCC package and pin 9 for the TSOP package are no con-
nect pins. To allow for simple in-system reprogrammability, the AT49BV001A(N)(T) does not
require high input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to reading from
an EPROM; it has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming
the AT49BV001A(N)(T) is performed by erasing a block of data and then programming on a
byte by byte basis. The byte programming time is a fast 30 µs. The end of a program cycle can
be optionally detected by the DATA polling feature. Once the end of a byte program cycle has
been detected, a new access for a read or program can begin. The typical number of program
and erase cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command sequence; the device internally con-
trols the erase operations. There are two 8K byte parameter block sections, two main memory
blocks, and one boot block.
The device has the capability to protect the data in the boot block; this feature is enabled by a
command sequence. The 16K-byte boot block section includes a reprogramming lock out fea-
ture to provide data integrity. The boot sector is designed to contain user secure code, and
when the feature is enabled, the boot sector is protected from being reprogrammed.
In the AT49BV001AN(T), once the boot block programming lockout feature is enabled, the
contents of the boot block are permanent and cannot be changed. In the AT49BV001A(T),
once the boot block programming lockout feature is enabled, the contents of the boot block
cannot be changed with input voltage levels of 5.5 volts or less.
VCC
GND
OE
WE
CE
RESET
ADDRESS
INPUTS
CONTROL
LOGIC
Y DECODER
X DECODER
AT49BV001A(N)
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
INPUT/OUTPUT
BUFFERS
PROGRAM
DATA LATCHES
Y-GATING
MAIN MEMORY
BLOCK 2
(64K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
PARAMETER
BLOCK 2
(8K BYTES)
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
1FFFF
10000
0FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
AT49BV001A(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
INPUT/OUTPUT
BUFFERS
PROGRAM
DATA LATCHES
Y-GATING
BOOT BLOCK
(16K BYTES)
PARAMETER
BLOCK 1
(8K BYTES)
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
1FFFF
1C000
1BFFF
1A000
19FFF
18000
17FFF
10000
0FFFF
00000
2 AT49BV001A(N)(T)
3364C–FLASH–9/03


Features Datasheet pdf Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Co ntrol and Timer • Sector Architecture – One 16K Bytes Boot Block with Prog ramming Lockout – Two 8K Bytes Parame ter Blocks – Two Main Memory Blocks ( 32K Bytes, 64K Bytes) • Fast Erase Cy cle Time – 3 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical Hardware Data Protection • DATA Pol ling for End of Program Detection • L ow Power Dissipation – 15 mA Active C urrent – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Descrip tion The AT49BV001A(N)(T) is a 2.7-volt -only in-system reprogrammable Flash Me mory. Its 1 megabit of memory is organi zed as 131,072 words by 8 bits. Manufac tured with Atmel’s advanced nonvolati le CMOS technology, the device offers a ccess times to 55 ns with power dissipa tion of just 54 mW over the industrial temperature range. Pin Configurations Pin Name A0 - A16 CE OE WE RESET I/O0 - I/O7 NC Function Addr.
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