AT49BV002

Features Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Two Main Memory Blocks (96K, 128K Bytes) Fast Erase Cycle Time – 10 Seconds Byte-by-Byte Programming – 30 µs/Byte Typical Hardware Data Protection DATA Polling for End of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. I/O1 14 I/O2 15 GND 16 I/O3 17 I/O4 18 I/O5 19 I/O6 20 Pin C...