DatasheetsPDF.com

AT49BV008A Dataheets PDF



Part Number AT49BV008A
Manufacturers ATMEL
Logo ATMEL
Description 8-megabit (1M x 8/512K x 16) Flash Memory
Datasheet AT49BV008A DatasheetAT49BV008A Datasheet (PDF)

Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 496K Word (992K Bytes) Main Memory Array Block • Fast Sector Erase Time – 10 seconds • Byte-by-byte or Word-by-word Programming – 30 µs Typical • Hardware Data Protection • Data Polling for End of Program Detection • L.

  AT49BV008A   AT49BV008A



Document
Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 496K Word (992K Bytes) Main Memory Array Block • Fast Sector Erase Time – 10 seconds • Byte-by-byte or Word-by-word Programming – 30 µs Typical • Hardware Data Protection • Data Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby cu.


AT49BV008 AT49BV008A AT49BV008AT


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)