AT49BV322AT

Features Single Voltage Read/Write Operation: 2.65V to 3.6V Access Time – 70 ns Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 12 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word Low-power Operation – 12 mA Active – 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash In...