AT49LV8192

Features Low Voltage Operation – 2.7V Read – 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks – One 488K Words (976K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Word-By-Word Programming - 30 µs/Word Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA. (continued) Pin Configurations Pin Name Function A0...