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DC/DC converter. BM2P109TF Datasheet |
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Datasheet
AC/DC Convertor IC
PWM type DC/DC converter IC
Integrated Switching MOSFET for non-Isolated type
BM2P109TF/BM2P159T1F/BM2P249TF
General
The PWM type DC/DC converter for AC/DC provides
an optimum system for all products that include an
electrical outlet. It enables simpler design of a high
effective converter specializing in non-isolated devices.
This series has a built-in HV starter circuit that
tolerates 650V, and it contributes to low power
consumption. With a current detection resistor for
switching as internal device, it can be designed as
small power supply. Since current mode control is
utilized, current is restricted in each cycle and
excellent performance is demonstrated in bandwidth
and transient response. The switching frequency is
fixed to 100 kHz. A frequency hopping function is also
on chip, and it contributes to low EMI. In addition, a
built-in super junction MOSFET which tolerates 650V
makes the design easy.
Features
PWM frequency: 100kHz
PWM current mode method
Frequency hopping function
Burst operation at light load
Built-in 650V start circuit
Built-in 650V switching MOSFET
VCC pin under voltage protection
VCC pin over voltage protection
Over current limiter function per cycle
Soft start function
Basic Specification
Power Supply Voltage Operation Range:
VCC(BM2P109TF)
: 8.00V to 10.81V
VCC(BM2P159T1F)
: 10.60V to 16.21V
VCC(BM2P249TF)
: 10.60V to 26.80V
DRAIN
: to 650V
■Normal Operation Current
■Burst Operation Current
Oscillation Frequency
Operation Temperature Range
MOSFET ON resistor:
0.85mA (Typ.)
0.45mA(Typ.)
100kHz(Typ.)
- 40 oC to +105 oC
9.5Ω (Typ.)
Package
SOP8 5.00mm x 6.20mm x 1.71mm pitch 1.27mm
(Typ.) (Typ.)
(Max.)
(Typ.)
Application
LED lights, air conditioners, and cleaners, (etc.).
Application circuit
D2
AC
Input
Filter
1 VCC
8
2 GND_IC 7
3
4
DRAIN
6
5
L
D1
VOUT
GND
○Product structure : Silicon monolithic integrated circuit
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© 2017 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
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TSZ02201-0F1F0A200290-1-2
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BM2P109TF/BM2P159T1F/BM2P249TF
Pin Descriptions
NO.
1
2
3
4
5
6
7
8
Pin Name
VCC
-
-
DRAIN
-
-
GND_IC
-
I/O
I
-
-
I/O
-
-
I/O
-
Function
Power Supply input pin
-
-
MOSFET DRAIN pin
-
-
GND pin
-
Block Diagram
Datasheet
ESD Diode
VCC GND_IC
-✔
--
--
-✔
--
--
✔-
--
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TSZ22111・15・001
2/21
SZ02201-0F1F0A200290-1-2
4.Oct.2017.Rev.002
|
BM2P109TF/BM2P159T1F/BM2P249TF
Datasheet
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Conditions
Maximum applied voltage 1
Vmax1
-0.3～650
V DRAIN
Maximum applied voltage 2
Vmax2
-0.3～32.0
V VCC
DRAIN current DC
IDD 1.30 A Consecutive operation
Allowable dissipation
Pd 0.56 W
Operating temperature range Topr -40 ～ +105 oC Surrounding temperature
Maximum
Tjmax
+150
oC
Storage temperature range
Tstr
-55 ～ +150
oC
(Note1) Derate by 4.563mW/°C when operating above Ta = 25°C when mounted (on 70 mm × 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate).
Recommended operating condition (Ta=25℃)
Parameter
Symbol
Power supply voltage range 1
Power supply voltage range 2
Power supply voltage range 2
Power supply voltage range 2
VDRAIN
VCC
Vcc
Vcc
Rating
~650
8.00～10.81
10.60～16.21
10.60～26.80
Unit Conditions
V DRAIN
V VCC (BM2P109TF)
V VCC (BM2P159T1F)
V VCC (BM2P249TF)
Electrical Characteristics in MOSFET part (Unless otherwise noted, Ta=25℃)
Parameter
Symbol
Specifications
Min Typ Max
Voltage between DRAIN
and SOURCE
V(BR)DDS
650
-
-
DRAIN leak current
ON resistor
IDSS
RDS(ON)
-
-
0 100
9.5 12.5
Unit Conditions
V ID=1mA / VGS=0V
uA VDS=650V / VGS=0V
Ω ID=0.25A / VGS=10V
Electrical Characteristics in Start circuits part (Unless otherwise noted, Ta=25℃)
Parameter
Symbol
Specifications
Min Typ Max
Unit
Start current 1
ISTART1
0.150
0.300
0.600 mA
Start current 2
ISTART2
1.200
3.000
6.000 mA
OFF current
ISTART3
-
10 20 uA
Start current switching voltage
VSC
0.500 0.800 1.200
V
Conditions
VCC= 0V
VCC=7V
After UVLO is released
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© 2017 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
3/21
SZ02201-0F1F0A200290-1-2
4.Oct.2017.Rev.002
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