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BZV81

NXP

Voltage reference diodes

DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV80; BZV81 Voltage reference diodes Product specifica...


NXP

BZV81

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Description
DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV80; BZV81 Voltage reference diodes Product specification Supersedes data of April 1992 1996 Mar 21 Philips Semiconductors Product specification Voltage reference diodes FEATURES Reference voltage range: 5.89 to 6.51 V (nom. 6.20 V) Low temperature coefficient range: max. 0.005 to 0.01 %/K. handbook, 4 columns BZV80; BZV81 DESCRIPTION Leadless voltage reference diode in a small glass SOD80 SMD package. k a APPLICATION Voltage reference sources. MAM215 Fig.1 Simplified outline (SOD80) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb Note 1. Device mounted on a FR4 printed-circuit board. PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C; note 1 CONDITIONS MIN. − − −65 − −20 MAX. 50 400 +200 200 +80 UNIT mA mW °C °C °C 1996 Mar 21 2 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Vref ∆Vref PARAMETER reference voltage reference voltage excursion BZV80 BZV81 SZ temperature coefficient BZV80 BZV81 rdif Notes differential resistance IZ = 7.5 mA CONDITIONS IZ = 7.5 mA IZ = 7.5 mA; test points for Tamb: −20; +25; +55; +80 °C; notes 1 and 2 IZ = 7.5 mA: notes 1 and 2 − − − − − MIN. 5.89 − − BZV80; BZV81 NOM. 6.20 − − MAX. 6.51 62 31 0.01 0.005 15 V ...




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