Thyristor/Diode Module. MP03HBN360-08 Datasheet

MP03HBN360-08 Module. Datasheet pdf. Equivalent

MP03HBN360-08 Datasheet
Recommendation MP03HBN360-08 Datasheet
Part MP03HBN360-08
Description Thyristor/Diode Module
Feature MP03HBN360-08; MP03XXX360 MP03XXX360 Dual Thyristor, Thyristor/Diode Module Replaces June 2001 version, DS4484-6..
Manufacture Dynex Semiconductor
Datasheet
Download MP03HBN360-08 Datasheet




Dynex Semiconductor MP03HBN360-08
MP03XXX360
MP03XXX360
Dual Thyristor, Thyristor/Diode Module
Replaces June 2001 version, DS4484-6.1
FEATURES
s Dual Device Module
s Electrically Isolated Package
www.DataShsePetr4eUs.scuorme Contact Construction
s International Standard Footprint
s Alumina (Non Toxic) Isolation Medium
APPLICATIONS
s Motor Control
s Controlled Rectifier Bridges
s Heater Control
s AC Phase Control
VOLTAGE RATINGS
Type Number
MP03XXX360-12
Repetitive Peak
Voltages
VDRM VRRM
V
1200
MP03XXX360-10
1000
MP03XXX360-08
800
Lower voltage grades available.
Conditions
Tvj = 0˚ to 130˚C,
IDRM = IRRM = 50mA
VDSM = VRSM =
VDRM = VRRM + 100V
respectively
KEY PARAMETERS
VDRM
IT(AV)
ITSM(per arm)
Visol
1200V
352A
10600A
3000V
DS4484-7.0 July 2002
Code
HBT
HBP
HBN
Circuit
Fig.1 Circuit diagrams
K2
1 2 3 G2
G1
K1
ORDERING INFORMATION
Order As:
MP03HBT360-12 or MP03HBT360-10 or MP03HBT360-08
MP03HBN360-12 or MP03HBN360-10 or MP03HBN360-08
MP03HBP360-12 or MP03HBP360-10 or MP03HBP360-08
Note: When ordering, please use the complete part number.
Outline type code: MP03
Fig. 2 Electrical connections - (not to scale)
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Dynex Semiconductor MP03HBN360-08
MP03XXX360
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
IT(AV) Mean on-state current
Half wave resistive load
Tcase = 75˚C
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Tcase = 85˚C
I
T(RMS
RMS value
Tcase = 75˚C
ITSM Surge (non-repetitive) on-current
10ms half sine, Tj = 130˚C
I2t I2t for fusing
VR = 0
ITSM Surge (non-repetitive) on-current
10ms half sine, T = 130˚C
j
I2t I2t for fusing
VR = 50% VDRM
V Isolation voltage
isol
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
352 A
306 A
553 A
10.6 kA
560 x 103 A2s
8.5 kA
360 x 103 A2s
3000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
(per thyristor or diode)
Rth(c-hs)
Tvj
T
stg
-
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
- Weight (nominal)
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M5
Electrical connections - M8
-
Min. Max. Units
- 0.105 ˚C/kW
- 0.115 ˚C/kW
- 0.12 ˚C/kW
- 0.05 ˚C/kW
- 135 ˚C
40 135
˚C
- 5(44) Nm (lb.ins)
- 9(80) Nm (lb.ins)
- 950 g
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Dynex Semiconductor MP03HBN360-08
MP03XXX360
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At
VRRM/VDRM,
T
j
=
130˚C
- 50 mA
dV/dt Linear rate of rise of off-state voltage
To 67% VDRM, Tj = 130˚C
- 1000 V/µs
dI/dt
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Rate of rise of on-state current
From 67% VDRM to 600A, gate source 10V, 5- 500 A/µs
t
r
=
0.5µs,
T
j
=
130˚C
VT(TO)
Threshold voltage
At Tvj = 135˚C. See note 1
- 0.75 V
r On-state slope resistance
T
At Tvj = 135˚C. See note 1
- 0.7 m
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
VGD
VFGM
VFGN
VRGM
IFGM
P
GM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At V T = 125oC
DRM case
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max. Units
3V
150 mA
0.25 V
30 V
0.25 V
5V
10 A
100 W
5W
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