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HY1908S

HOOYI

N-Channel Enhancement Mode MOSFET

HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Ra...


HOOYI

HY1908S

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Description
HY1908D/U/S N-Channel Enhancement Mode MOSFET Features 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1908 HY1908 HY1908 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed ...




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