DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2138, 2SK2138-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION ...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2138, 2SK2138-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES Low On-state Resistance
RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A)
Low Ciss Ciss = 550 pF TYP. High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)*
ID(pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
70 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Storage Temperature
Tstg –55 to +150 ˚C
Channel Temperature
Tch 150 ˚C
Single Avalanche Current**
IAS 14 A
Single Avalanche Energy**
EAS 8.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX.
4.8 MAX...
