STF8N80K5

STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data 3 2 1 TO-220FP 1 2 3 I2PAKFP (TO-281) Features Order codes STF8N80K5 STFI8N80K5 VDS RDS(on)max. 800 V 0.95 Ω ID 6A PTOT 25 W Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram D(2) G(1) Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Order codes STF8N80K5 STFI8N80K5 Table 1. Device summary Marking Package 8N80K5 TO-220FP I2PAKFP (TO-281) Packaging Tube October 2014 This is in...