P-Channel Enhancement Mode MOSFET
T echcode®
P-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3307 uses advanced trench technology...
Description
T echcode®
P-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3307 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
‐30V/‐50A RDS(ON) < 16mΩ @ VGS=‐4.5V
RDS(ON) < 9.5mΩ @ VGS=‐10V Reliable and Rugged HBM ESD capability level of 8KV typical Lead free product is available DFN3*3‐8 Package
Application
PWM applications Load switch Power management
DATASHEET
TDM3307
PPAK-3*3-8
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source Voltage Gate‐Source Voltage Diode Continuous Forward Current Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation (note1)
Continuous Drain Current
Maximum Power Dissipat...
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