Document
Philips Semiconductors
Objective specification
Rectifier diode fast, high-voltage
FEATURES
• Low forward volt drop • Low forward recovery voltage • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance
BY559-1500
SYMBOL
QUICK REFERENCE DATA
VR = 1500 V VF ≤ 1.2 V Vfr ≤ 14 V tfr ≤ 250 ns IF(AV) = 10 A IFSM ≤ 100 A
k 1
a 2
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diode featuring fast forward recovery and low forward recovery voltage. The device is intended for use in multi-sync monitor horizontal deflection circuits with maximum scan rates from 82 kHz to 120 kHz. The BY559 series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM IFWM IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Peak working forward current Peak repetitive forward current Peak non-repetitive forward current Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 1500 1300 10 150 180 200 150 150 UNIT V V A A A A ˚C ˚C
Tstg Tj
f = 120 kHz; t = 100 µs t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max)
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. 60 MAX. 1.0 UNIT K/W K/W
September 1998
1
Rev 1.100
Philips Semiconductors
Objective specification
Rectifier diode fast, high-voltage
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 10 A IF = 10 A; Tj = 125 ˚C VR = VRWMmax VR = VRWMmax; Tj = 125 ˚C MIN. -
BY559-1500
TYP. 1.0 0.79 -
MAX. 1.25 0.9 0.5 2.0
UNIT V V mA mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL Vfr tfr trr Qs PARAMETER Forward recovery voltage Forward recovery time Reverse recovery time Reverse recovery charge CONDITIONS IF = 10 A; dIF/dt = 50 A/µs IF = 10 A; dIF/dt = 50 A/µs; VF = 5 V IF = 10 A; dIF/dt = 50 A/µs; VF = 2 V IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V MIN. TYP. 7 250 450 0.75 4.0 MAX. 11 350 600 1.0 5.0 UNIT V ns ns µs µC
September 1998
2
Rev 1.100
Philips Semiconductors
Objective specification
Rectifier diode fast, high-voltage
BY559-1500
I
F
20
IF / A Tj = 25 C Tj = 125 C
BY559-1500
15
max typ
10% tfr VF
5
time
10
V VF 5V / 2V time
fr
0 0 0.2 0.4 0.6 0.8 VF / V 1 1.2 1.4
Fig.1. Definition of Vfr and tfr
Fig.4. Typical and maximum forward characteristic IF = f(VF); parameter Tj
I
dI F dt
F
25
Vfr / V max
BY559-1500
20
trr
15
typ
time
10
Qs
25%
100%
5
I
R
0
0
50
100 150 dIF/dt (A/us)
200
250
Fig.2. Definition of trr and Qs
Fig.5. Typical and maximum Vfr = f(dIF/dt); IF = 10 A; Tj = 25˚C
Transient thermal impedance, Zth j-mb (K/W)
VCC
10
1
Line output transformer LY
0.1
0.01
P D
tp
D=
tp T t
Cf deflection transistor D1
Cs
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY559
10s
Fig.3. Basic horizontal deflection circuit.
Fig.6. Transient thermal impedance Zth = f(tp)
September 1998
3
Rev 1.100
Philips Semiconductors
Objective specification
Rectifier diode fast, high-voltage
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BY559-1500
4,5 max
10,3 max
1,3
3,7 2,8
5,9 min
3,0 max not tinned 3,0
15,8 max
13,5 min
1,3 max 1 (2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.100
.