DatasheetsPDF.com

BY559-1500 Dataheets PDF



Part Number BY559-1500
Manufacturers NXP
Logo NXP
Description Rectifier diode fast/ high-voltage
Datasheet BY559-1500 DatasheetBY559-1500 Datasheet (PDF)

Philips Semiconductors Objective specification Rectifier diode fast, high-voltage FEATURES • Low forward volt drop • Low forward recovery voltage • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BY559-1500 SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.2 V Vfr ≤ 14 V tfr ≤ 250 ns IF(AV) = 10 A IFSM ≤ 100 A k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring fast forward recovery and low forward .

  BY559-1500   BY559-1500


Document
Philips Semiconductors Objective specification Rectifier diode fast, high-voltage FEATURES • Low forward volt drop • Low forward recovery voltage • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BY559-1500 SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.2 V Vfr ≤ 14 V tfr ≤ 250 ns IF(AV) = 10 A IFSM ≤ 100 A k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring fast forward recovery and low forward recovery voltage. The device is intended for use in multi-sync monitor horizontal deflection circuits with maximum scan rates from 82 kHz to 120 kHz. The BY559 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM IFWM IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Peak working forward current Peak repetitive forward current Peak non-repetitive forward current Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 1500 1300 10 150 180 200 150 150 UNIT V V A A A A ˚C ˚C Tstg Tj f = 120 kHz; t = 100 µs t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. 60 MAX. 1.0 UNIT K/W K/W September 1998 1 Rev 1.100 Philips Semiconductors Objective specification Rectifier diode fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 10 A IF = 10 A; Tj = 125 ˚C VR = VRWMmax VR = VRWMmax; Tj = 125 ˚C MIN. - BY559-1500 TYP. 1.0 0.79 - MAX. 1.25 0.9 0.5 2.0 UNIT V V mA mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL Vfr tfr trr Qs PARAMETER Forward recovery voltage Forward recovery time Reverse recovery time Reverse recovery charge CONDITIONS IF = 10 A; dIF/dt = 50 A/µs IF = 10 A; dIF/dt = 50 A/µs; VF = 5 V IF = 10 A; dIF/dt = 50 A/µs; VF = 2 V IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V MIN. TYP. 7 250 450 0.75 4.0 MAX. 11 350 600 1.0 5.0 UNIT V ns ns µs µC September 1998 2 Rev 1.100 Philips Semiconductors Objective specification Rectifier diode fast, high-voltage BY559-1500 I F 20 IF / A Tj = 25 C Tj = 125 C BY559-1500 15 max typ 10% tfr VF 5 time 10 V VF 5V / 2V time fr 0 0 0.2 0.4 0.6 0.8 VF / V 1 1.2 1.4 Fig.1. Definition of Vfr and tfr Fig.4. Typical and maximum forward characteristic IF = f(VF); parameter Tj I dI F dt F 25 Vfr / V max BY559-1500 20 trr 15 typ time 10 Qs 25% 100% 5 I R 0 0 50 100 150 dIF/dt (A/us) 200 250 Fig.2. Definition of trr and Qs Fig.5. Typical and maximum Vfr = f(dIF/dt); IF = 10 A; Tj = 25˚C Transient thermal impedance, Zth j-mb (K/W) VCC 10 1 Line output transformer LY 0.1 0.01 P D tp D= tp T t Cf deflection transistor D1 Cs 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY559 10s Fig.3. Basic horizontal deflection circuit. Fig.6. Transient thermal impedance Zth = f(tp) September 1998 3 Rev 1.100 Philips Semiconductors Objective specification Rectifier diode fast, high-voltage MECHANICAL DATA Dimensions in mm Net Mass: 2 g BY559-1500 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.100 .


BY558 BY559-1500 BY559-1500


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)