Controlled avalanche rectifiers
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BYD11 series Controlled avalanche rectifiers
Product specific...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BYD11 series Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
k a
BYD11 series
MAM196
Fig.1 Simplified outline (SOD91) and symbol.
TYPE NUMBER BYD11D BYD11G BYD11J BYD11K BYD11M 11D 11G 11J 11K 11M
MARKING CODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD11D BYD11G BYD11J BYD11K BYD11M VRWM crest working reverse voltage BYD11D BYD11G BYD11J BYD11K BYD11M VR continuous reverse voltage BYD11D BYD11G BYD11J BYD11K BYD11M − − − − − 200 400 600 800 1000 V V V V V − − − − − 200 400 600 800 1000 V V V V V PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
SYMBOL IF(AV)
PARAMETER average forward current
CONDITIONS Ttp = 55 °C...
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