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BYD31K Dataheets PDF



Part Number BYD31K
Manufacturers NXP
Logo NXP
Description Fast soft-recovery controlled avalanche rectifiers
Datasheet BYD31K DatasheetBYD31K Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D122 BYD31 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1996 Sep 18 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. k a BYD31 series and fat.

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DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D122 BYD31 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1996 Sep 18 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. k a BYD31 series and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD31D BYD31G BYD31J BYD31K BYD31M VR continuous reverse voltage BYD31D BYD31G BYD31J BYD31K BYD31M IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 °C; see Fig.4 Tamb = 60 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − − − − − − 200 400 600 800 1000 440 V V V V V mA PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT − 320 mA − − − 4 3 5 A A A 1996 Sep 18 2 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation BYD31D to J BYD31K and M Tstg Tj storage temperature junction temperature see Fig.7 CONDITIONS t = 20 µs half sine wave; Tj = Tj max prior to surge − − −65 −65 BYD31 series MIN. MAX. UNIT 100 50 +175 +175 W W °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.5 A; Tj = Tj max; see Fig.8 IF = 0.5 A; see Fig.8 V(BR)R reverse avalanche breakdown voltage BYD31D BYD31G BYD31J BYD31K BYD31M IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 °C; see Fig.9 trr reverse recovery time BYD31D to J BYD31K and M Cd dI R -------dt diode capacitance maximum slope of reverse recovery current BYD31D to J BYD31K and M when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25A see Fig.12 f = 1 MHz; VR = 0 V; see Fig.10 when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 IR = 0.1 mA 300 500 700 900 1100 − − − − − − − − − − − − − − 1 75 V V V V V µA µA MIN. − − TYP. − − MAX. 1.15 1.35 V V UNIT − − − − − 9 250 300 − ns ns pF − − − − 6 5 A/µs A/µs 1996 Sep 18 3 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm BYD31 series VALUE 180 250 UNIT K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 18 4 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers GRAPHICAL DATA MGC517 BYD31 series MGC518 handbook, halfpage 0.6 handbook, halfpage 0.6 IF(AV) (A) lead length 10 mm 0.4 IF(AV) (A) 0.4 0.2 0.2 0 0 100 Ttp a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. ( oC) 200 0 0 100 Tamb ( o C) 200 a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MCD580 handbook, full pagewidth 5.0 I FRM (A) δ= 0.05 0.1 2.5 0.2 0.5 1 0 10 −2 10 −1 10 0 10 1 10 2 10 3 tp (ms) 10 4 Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 5 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series MCD586 handbook, full pagewidth 4 I FRM (A) 3 δ= 0.05 2 0.1 0.2 1 0.5 1 0 10 −2 10 −1 10 0 10 1 10 2 10 3 tp (ms) 10 4 Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.5 Maximum repetitive peak f.


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