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BYD53U Dataheets PDF



Part Number BYD53U
Manufacturers NXP
Logo NXP
Description Fast soft-recovery controlled avalanche rectifiers
Datasheet BYD53U DatasheetBYD53U Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 18 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. handbook, 4 columns BYD53 s.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 18 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. handbook, 4 columns BYD53 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. The SOD81 package is k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V VR continuous reverse voltage BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V IF(AV) average forward current BYD53D to M BYD53U and V IF(AV) average forward current BYD53D to M BYD53U and V IFRM repetitive peak forward current BYD53D to M BYD53U and V Ttp = 55 °C; lead length = 10 mm see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 65 °C; PCB mounting (see Fig.17); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 55 °C; see Figs 6 and 7 − − 6.5 8.25 A A − − − − − − − − − − − 200 400 600 800 1000 1200 1400 0.75 0.85 V V V V V V V A A PARAMETER repetitive peak reverse voltage − − − − − − − 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT 0.40 0.45 A A 1998 Dec 04 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD53D to M BYD53U and V IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.12 CONDITIONS Tamb = 65 °C; see Figs 8 and 9 − − − BYD53 series MIN. MAX. 3.6 4.45 5 A A A UNIT ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature − −65 −65 10 +175 +175 mJ °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD53D to M BYD53U and V VF forward voltage BYD53D to M BYD53U and V V(BR)R reverse avalanche breakdown voltage BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V IR reverse current VR = VRRMmax; see Fig.15 VR = VRRMmax; Tj = 165 °C; see Fig.15 trr reverse recovery time BYD53D to J BYD53K and M BYD53U and V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.16 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 IR = 0.1 mA 300 500 700 900 1100 1300 1500 − − − − − − − − − − − − − − − − − − 1 100 V V V V V V V µA µA IF = 1 A; see Figs 13 and 14 − − − − 3.6 2.3 V V CONDITIONS IF = 1 A; Tj = Tj max; see Figs 13 and 14 MIN. − − TYP. − − MAX. 2.1 1.7 V V UNIT − − − − − − − 20 30 75 150 − ns ns ns pF 1998 Dec 04 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL dI R -------dt PARAMETER maximum slope of reverse recovery current BYD53D to J BYD53K and M BYD53U and V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm CONDITIONS when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.19 MIN. BYD53 series TYP. MAX. UNIT − − − − − − 7 6 5 A/µs A/µs A/µs VALUE 60 120 UNIT K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17. For more information please refer to the ‘General Part of associated Handbook’. 1998 Dec 04 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers GRAPHICAL DATA MGM267 BYD53 series handbook, halfpage 1.0 IF(AV) (A) handbook, halfpage 1.6 MLC303 I F(AV) (A) 1.2 0.8 0.6 0.8 0.4 lead length 10 mm 0.4 0.2 0 0 40 80 120 160 200 Ttp (°C) 0 0 BYD53U and V a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. 100 T tp ( oC) 200 BYD53D to M a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0.6 MGM266 handbook, halfpage 0.8 MLC304 IF(AV) (A) 0.4 I F(AV) (A) 0.6 0.4 0.2 0.2 0 0 40 80 120 160 200 Tamb (°C) 0 0 100 Tamb ( o C) 200 BYD53D to M a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig. 17. Switched mode application. BYD53U and V a = 1..


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