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BYD71G Dataheets PDF



Part Number BYD71G
Manufacturers NXP
Logo NXP
Description Ultra fast low-loss controlled avalanche rectifiers
Datasheet BYD71G DatasheetBYD71G Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. k a BYD71 series hermetic.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. k a BYD71 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical SOD91 glass package through Implotec™(1) technology. This package is MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G VR continuous reverse voltage BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G IF(AV) average forward current BYD71A to D BYD71E to G IF(AV) average forward current BYD71A to D BYD71E to G Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 − − − − − − − − − − − 50 100 150 200 250 300 400 0.56 0.54 V V V V V V V A A PARAMETER repetitive peak reverse voltage − − − − − − − 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT 0.43 0.41 A A 1996 Sep 19 2 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD71A to D BYD71E to G IFRM repetitive peak forward current BYD71A to D BYD71E to G IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax t = 20 µs half sine wave; Tj = Tj max prior to surge − − −65 −65 Tamb = 60 °C; see Figs 8 and 9 − − − CONDITIONS Ttp = 55 °C; see Figs 6 and 7 − − BYD71 series MIN. MAX. 4.7 5.0 3.7 3.9 7 A A A A A UNIT PRSM non-repetitive peak reverse power dissipation BYD71A to D BYD71E to G 250 150 +175 +175 W W °C °C Tstg Tj storage temperature junction temperature ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD71A to D BYD71E to G VF forward voltage BYD71A to D BYD71E to G V(BR)R reverse avalanche breakdown voltage BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G IR reverse current VR = VRRMmax; see Fig 14 VR = VRRMmax; Tj = 165 °C; see Fig 14 trr reverse recovery time BYD71A to D BYD71E to G when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A see Fig 18 IR = 0.1 mA 55 110 165 220 275 330 440 − − − − − − − − − − − − − − − − − − 1 75 V V V V V V V µA µA IF = 0.5 A; see Figs 12 and 13 CONDITIONS IF = 0.5 A; Tj = Tj max; see Figs 12 and 13 MIN. − − − − TYP. − − − .


BYD71F BYD71G BYD72


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