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BYG20

Vishay Telefunken

Fast Silicon Mesa SMD Rectifier

BYG20 Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse curr...


Vishay Telefunken

BYG20

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BYG20 Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable 15 811 Applications Surface mounting Fast rectifier Freewheeling diodes in SMPS and converters Snubber diodes Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) Test Conditions Type BYG20D BYG20G BYG20J Symbol VR=VRRM VR=VRRM VR=VRRM IFSM IFAV Tj=Tstg I(BR)R=1A, Tj=25°C ER Value 200 400 600 30 1.5 –55...+150 20 Unit V V V A A °C mJ tp=10ms, half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction lead TL=const. Junction ambient mounted on epoxy–glass hard tissue mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Document Number 86009 Rev. 3, 24-Jun-98 www.vishay.de FaxBack +1-408-970-5600 1 (5) BYG20 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1.5A VR=VRRM VR=VRRM, Tj=100°C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR trr Min Typ Max 1.3 1.4 1 10 75 Unit V V mA mA ns Charac...




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