Controlled avalanche rectifiers
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D168
BYG50 series Controlled avalanche rectifiers
Preliminary speci...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D168
BYG50 series Controlled avalanche rectifiers
Preliminary specification 1996 May 24
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability UL 94V-O classified plastic package Shipped in 12 mm embossed tape.
Top view Side view
handbook, 4 columns
BYG50 series
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
DESCRIPTION DO-214AC; SOD106 surface mountable package with glass passivated chip.
cathode band k a
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYG50D BYG50G BYG50J BYG50K BYG50M VR continuous reverse voltage BYG50D BYG50G BYG50J BYG50K BYG50M IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − − − − − − − 200 400 600 800 1000 2.1 1.0 V V V V V A A PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT
−
0.7
A
−
...
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