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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D168
BYG60 series Fast soft-recovery controlled avalanche rectifiers
Preliminary specification File under Discrete Semiconductors, SC01 1996 Jun 05
Philips Semiconductors
Preliminary specification
Fast soft-recovery controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape.
Top view
handbook, 4 columns
BYG60 series
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
cathode band a
k
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYG60D BYG60G BYG60J BYG60K BYG60M VR continuous reverse voltage BYG60D BYG60G BYG60J BYG60K BYG60M IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − − − − − − − 200 400 600 800 1000 1.90 0.90 V V V V V A A PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT
−
0.65
A
−
25
A
1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery controlled avalanche rectifiers
SYMBOL ERSM PARAMETER non-repetitive peak reverse avalanche energy BYG60D to J BYG60K and M Tstg Tj storage temperature junction temperature see Fig.4 CONDITIONS L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − − −65 −65
BYG60 series
MIN.
MAX.
UNIT
10 7 +175 +175
mJ mJ °C °C
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYG60D BYG60G BYG60J BYG60K BYG60M IR reverse current VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 °C; see Fig.6 trr reverse recovery time BYG60D to J BYG60K and M Cd diode capacitance BYG60D to J BYG60K and M when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 VR = 0 V; f = 1 MHz − − 30 25 − − pF pF CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 IR = 0.1 mA 300 500 700 900 1100 − − − − − − − − − − − − − − 5 100 V V V V V µA µA MIN. − − TYP. − − MAX. 0.98 1.20 V V UNIT
− −
− −
250 300
ns ns
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the ‘General Part of Handbook SC01’. CONDITIONS VALUE 25 100 150 UNIT K/W K/W K/W
1996 Jun 05
3
Philips Semiconductors
Preliminary specification
Fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
MGD481
BYG60 series
MGD482
handbook, halfpage
4
handbook, halfpage
1.6
IF(AV) (A) 3
IF(AV) (A) 1.2
2
0.8
1
0.4
0 0 100 Ttp (°C) 200
0 0 100 Tamb (°C) 200
VR = VRRMmax; δ = 0.5; a = 1.57.
VR = VRRMmax; δ = 0.5; a = 1.57 Device mounted as shown in Fig.7; solid line: Al2O3 PCB; dotted line: epoxy PCB.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGD483
handbook, halfpage
200 Tj (°C) 160
MGD484
handbook, halfpage
10 IF (A)
8
120
6
80 D 40 G J K M
4
2
0 0 400 800 VR (V) 1200
0 0 1 2 VF (V) 3
Device mounted as shown in Fig.7 Solid line: Al2O3 PCB Dotted line: epoxy PCB.
Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C.
Fig.4
Maximum permissible junction temperature as a function of reverse voltage.
Fig.5
Forward current as a function of forward voltage; maximum values.
1996 Jun 05
4
Philips Semiconductors
Preliminary specification
Fast soft-recovery controlled avalanche rectifiers
BYG60 series
3 10 handbook, halfpage
MGC532
50
IR (µA) 10 2 4.5 50 10 2.5
1
0
100
Tj ( C)
o
200
1.25
MSB213
VR = VRMMmax.
Dimensions in mm. Material: AL2O3 or epoxy-glass.
Fig.6
Reverse current as a function of junction temperature; maximum values.
Fig.7
Printed-circuit board for surface mounting.
handbook, full pagewidth
DUT +
IF (A) 0.5 1Ω t rr
10 Ω
25 V 50 Ω 0 0.25 0.5 IR (A) 1
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.8 Test circ.