BYG90-90

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-90 Schottky barrier rectifier diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier rectifier diode FEATURES Low switching losses High breakdown voltage Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package. k a BYG90-90 DESCRIPTION The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier handbook, 4 columns APPLICATIONS Low power switched-mode power supplies Rectifying Polarity protection. Top view MAM129 - 1 Fig.1 Simplified outline (SOD106A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRRM VRWM IF(AV) PARAMETER continuous reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current Tamb = 100 °C; see Fig.2; Rth j-a = 13.5 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method tp = 100 µs − CONDITIONS MIN. MAX. 90 90 90 1 V V V A UNIT IFSM IRSM Tstg Tj Notes non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature − − −65 − 30 0.5 +150 150 A A °C °C 1. Refer to SOD106A standard mounting conditions. 2. For Schottky ...