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SM24T1G Dataheets PDF



Part Number SM24T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Transient Voltage Suppressor Diode Array
Datasheet SM24T1G DatasheetSM24T1G Datasheet (PDF)

SM05T1G Series ESD Protection Diode Array Dual Common Anode These dual monolithic silicon surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for si.

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SM05T1G Series ESD Protection Diode Array Dual Common Anode These dual monolithic silicon surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Working Peak Reverse Voltage Range − 5.0 V to 36 V • Peak Power − 300 Watt (8/20 ms) • Low Leakage − 1.0 mA • Flammability Rating UL 94 V−0 • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Mechanical Characteristics: CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case FINISH: Corrosion Resistant Finish, Easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications Available in 8 mm Tape and Reel Use the Device Number to Order the 7 Inch/3,000 Unit Reel Replace the “T1” with “T3” in the Device Number to Order the 13 Inch/10,000 Unit Reel www.onsemi.com SOT−23 CASE 318 STYLE 12 1 PIN 1. CATHODE 3 2. CATHODE 2 3. ANODE MARKING DIAGRAM xxM MG G 1 xxM = Device Code xx = 05, 12, 15, 24, 36 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† SM05T1G SZSM05T1G SOT−23 (Pb−Free) SOT−23 (Pb−Free) 3,000/Tape & Reel 3,000/Tape & Reel SM12T1G SOT−23 3,000/Tape & Reel (Pb−Free) SM15T1G SOT−23 3,000/Tape & Reel (Pb−Free) SM24T1G SM36T1G SOT−23 (Pb−Free) SOT−23 (Pb−Free) 3,000/Tape & Reel 3,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 1 August, 2018 − Rev. 9 Publication Order Number: SM05T1/D SM05T1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C IEC 61000−4−2 (ESD) Air Contact Ppk 300 W kV ±15 ±26 IEC 61000−4−4 (EFT) 40 A IEC 61000−4−5 (Lightning) 12 A Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient °PD° RqJA 225 °mW° 1.8 mW/°C 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient °PD RqJA 300 °mW 2.4 mW/°C 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 3 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina NOTE: Other voltages may be available upon request ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK I IF VC VBR VRWM IIRT VF V IPP Uni−Directional ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Device* SM05T1G VBR, Breakdown Voltage VRWM IR @ VRWM (Volts) IT Device Marking (Volts) (mA) Min Max mA 05M 5 10 6.2 7.3 1.0 VC @ IPP = 1 Amp (Volts) 9.8 Max IPP (Note 4) (Amps) 17 Typical Capacitance (pF) Pin 1 to 3 @ 0 Volts 225 SM12T1G 12M 12 1.0 13.3 15.75 1.0 19 12 95 SM15T1G 15M 15 1.0 16.7 19.6 1.0 24 10 100 SM24T1G 24M 24 1.0 26.7 31.35 1.0 43 5.0 60 SM36T1G 36M 36 1.0 40.0 46.95 1.0 60 4.0 45 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. 8/20 ms pulse waveform per Figure 3 *Include SZ-prefix devices wh.


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