BYM36 Sinterglass Diode Datasheet

BYM36 Datasheet, PDF, Equivalent


Part Number

BYM36

Description

Fast Avalanche Sinterglass Diode

Manufacture

Vishay Siliconix

Total Page 5 Pages
Datasheet
Download BYM36 Datasheet


BYM36
VISHAY
Fast Avalanche Sinterglass Diode
BYM36
Vishay Semiconductors
Features
• Glass passivated
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
Applications
Switched mode power supplies
High-frequency inverter circuits
949588
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
BYM36A
Part
BYM36B
BYM36C
BYM36D
BYM36E
Type differentiation
VR = 200 V; IFAV = 3 A
VR = 400 V; IFAV = 3 A
VR = 600 V; IFAV = 3 A
VR = 800 V; IFAV = 2.9 A
VR = 1000 V; IFAV = 2.9 A
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
Package
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
tp = 10 ms, half sinewave
I(BR)R = 1 A, inductive load
Part
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36A-BYM36C
BYM36D-BYM36E
Symbol
VR = VRRM
Value
200
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFAV
IFAV
ER
400
600
800
1000
65
3
2.9
20
Tj = Tstg - 55 to + 175
Unit
V
V
V
V
V
A
A
A
mJ
°C
Document Number 86012
Rev. 1.6, 12-Aug-04
www.vishay.com
1

BYM36
BYM36
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
l = 10 mm, TL = constant
on PC Board with spacing
\re\n25 mm
Symbol
RthJA
RthJA
Value
25
70
VISHAY
Unit
K/W
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part Symbol Min Typ. Max Unit
Forward voltage
IF = 3 A
BYM36A-
BYM36C
VF
1.6 V
BYM36D-
BYM36E
VF
1.78 V
IF = 3 A, Tj = 175 °C
BYM36A-
BYM36C
VF
1.22 V
BYM36D-
BYM36E
VF
1.28 V
Reverse current
VR = VRRM
IR 5 µA
VR = VRRM, Tj = 150 °C
IR 100 µA
Reverse breakdown voltage
IR = 100 µA
BYM36A
V(BR)R
300
V
BYM36B
V(BR)R
500
V
BYM36C
V(BR)R
700
V
BYM36D
V(BR)R
900
V
BYM36E
V(BR)R 1100
V
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
BYM36A-
BYM36C
trr
100 ns
BYM36D-
BYM36E
trr
150 ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
600
500 RthJA = 25 K/W
400
1000V
300
RthJA= 70 K/W
200
800V
600V
100
0
0
95 9705
400V
200V
40 80 120 160 200
Tj – Junction Temperature ( ° C )
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
4
BYM36A, BYM36B, BYM36C
3
RthJA = 25 K/W
2
R thJA =70 K/W
1
0
0
95 9706
VR = VRRM
Half Sinewave
40 80 120 160 200
Tamb - Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 86012
Rev. 1.6, 12-Aug-04


Features VISHAY BYM36 Vishay Semiconductors Fas t Avalanche Sinterglass Diode Features • • • • Glass passivated Herme tically sealed package Very low switchi ng losses Low reverse current 949588 • High reverse voltage Mechanical Da ta Case: SOD-64 Sintered glass case Ter minals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Applications Switched mode power suppli es High-frequency inverter circuits Pa rts Table Part BYM36A BYM36B BYM36C BYM 36D BYM36E Type differentiation VR = 20 0 V; IFAV = 3 A VR = 400 V; IFAV = 3 A VR = 600 V; IFAV = 3 A VR = 800 V; IFAV = 2.9 A VR = 1000 V; IFAV = 2.9 A SOD- 64 SOD-64 SOD-64 SOD-64 SOD-64 Package Absolute Maximum Ratings Tamb = 25 °C , unless otherwise specified Parameter Reverse voltage = Repetitive peak rever se voltage Test condition see electrica l characteristics Part BYM36A BYM36B BY M36C BYM36D BYM36E Peak forward surge current Average forward current Non .
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