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BM29F040

Winbond

4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY

BRIGHT Microelectronics Inc. Preliminary BM29F040 4 MEGABIT (512K × 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL ...


Winbond

BM29F040

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Description
BRIGHT Microelectronics Inc. Preliminary BM29F040 4 MEGABIT (512K × 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL DESCRIPTION The BM29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as 512K × 8 bits each. The BM29F040 is offered in an Industry standard 32-pin package which is backward compatible to 1 Megabit and also pin compatible to EEPROMs. The device is offered in PDIP, PLCC and TSOP packages. The device is designed to be programmed and erased in system with the standard system 5 Volt Vcc supply. An external 12.0 Volts Vpp is not required for program and erase operation. The device can also be reprogrammed in standard EPROM programmers. The BM29F040 offers access times between 70 to 150 nS. The device has separate chip enable ( CE ), write enable ( WE ) and output enable ( OE ) controls to eliminate bus contention. BMI flash memory technology reliably stores memory information even after 100,000 erase and program cycles. The BMI proprietary cell technology...




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