2SK1620(L), 2SK1620(S)
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • H...
2SK1620(L), 2SK1620(S)
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator, DC-DC converter and motor driver
Outline
REJ03G0957-0200 (Previous: ADE-208-1298)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
4
D
1 2 3
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1620(L), 2SK1620(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch
Tstg
Item
Symbol
Drain to source breakdown voltage V(BR)DSS
G...