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2SK1620L

Renesas

Silicon N-Channel MOS FET

2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • H...


Renesas

2SK1620L

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2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline REJ03G0957-0200 (Previous: ADE-208-1298) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 D 1 2 3 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00 Sep 07, 2005 page 1 of 7 2SK1620(L), 2SK1620(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Drain to source breakdown voltage V(BR)DSS G...




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