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2SK1936-01

Fuji Electric

N-channel MOS-FET

2SK1936-01 FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving ...


Fuji Electric

2SK1936-01

File Download Download 2SK1936-01 Datasheet


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2SK1936-01 FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current V DS V DGR ID 500 500 10 Pulsed Drain Current I D(puls) 40 Gate-Source-Voltage V GS ±30 Max. Power Dissipation P D 100 Operating and Storage Temperature Range T ch 150 T stg -55 ~ +150 N-channel MOS-FET 500V 0,76Ω 10A 100W > Outline Drawing > Equivalent Circuit Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Drain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V Gate Threshhold Voltage V GS(th) ID=1mA VDS=V...




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